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参数资料
| 型号： | QEE113E3R0 |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | LED IR GAAS SIDELOOK 940NM |
| 标准包装： | 2,000 |
| 电流 - DC 正向(If)： | 50mA |
| 辐射强度(le)最小值@正向电流： | 3mW/sr @ 100mA |
| 波长： | 940nm |
| 正向电压： | 1.5V |
| 视角： | 50° |
| 方向： | 侧视图 |
| 安装类型： | 通孔 |
| 封装/外壳： | 径向 |
| 包装： | 带卷 (TR) |
Absolute Maximum Ratings (T A = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T OPR
T STG
T SOL-I
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron) (2,3,4)
Rating
-40 to +100
-40 to +100
240 for 5 sec
Units
°C
°C
°C
T SOL-F
Soldering Temperature
(Flow) (2,3)
260 for 10 sec
°C
I F
V R
P D
Continuous Forward Current
Reverse Voltage
Power Dissipation (1)
50
5
100
mA
V
mW
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics (T A = 25°C)
Symbol Parameter
λ PE
Peak Emission Wavelength
TC λ
Temperature Coef?cient
Test Conditions
I F = 20mA
Min.
Typ.
945
0.3
Max.
Units
nm
nm / °C
2 Θ 1 /2
V F
TC VF
I R
Emission Angle
Forward Voltage
Temperature Coef?cient
Reverse Current
I F = 100mA
I F = 100mA, tp = 20ms
V R = 5V
50
-2
1.5
10
°
V
mV / °C
μA
I E
Radiant Intensity
I F = 100mA, tp = 20ms
3
7.5
12
mW/sr
TC IE
Temperature Coef?cient
-0.7
% / °C
t r
t f
C j
Rise Time
Fall Time
Junction Capacitance
I F = 100mA
V R = 0V
800
800
14
ns
ns
pF
?2002 Fairchild Semiconductor Corporation
QEE113 Rev. 1.0.1
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
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| QEE122 | 功能描述:红外发射源 INFRARED DIODE RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEE122 | 制造商:Fairchild Semiconductor Corporation 功能描述:LED LAMP ROHS COMPLIANT:NO |
| QEE122_Q | 功能描述:红外发射源 INFRARED DIODE RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEE123 | 功能描述:红外发射源 0.4mW 1.7V IR LED RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEE123 | 制造商:Fairchild Semiconductor Corporation 功能描述:INFRARED LED ROHS COMPLIANT:NO |
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