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参数资料
| 型号： | QEE123.E3R0 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 红外LED |
| 英文描述： | 1.65 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/6页 |
| 文件大小： | 366K |
| 代理商： | QEE123.E3R0 |
4/30/02
Page 2 of 4
2002 Fairchild Semiconductor Corporation
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE122
QEE123
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA ux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing
.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specied)
Parameter
Symbol
Rating
Unit
Operating Temperature
TOPR
-40 to + 100
°C
Storage Temperature
TSTG
-40 to + 100
°C
Soldering Temperature (Iron)(2,3,4)
TSOL-I
240 for 5 sec
°C
Soldering Temperature (Flow)(2,3)
TSOL-F
260 for 10 sec
°C
Continuous Forward Current
IF
50
mA
Reverse Voltage
VR
5V
Power Dissipation(1)
PD
100
mW
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Peak Emission Wavelength
IF = 100 mA
λPE
—
940
—
nm
Emission Angle
IF = 100 mA
2
Θ1/2
—
50
—
Deg.
Forward Voltage
IF = 100 mA, tp = 20 ms
VF
——
1.7
V
Reverse Current
VR = 5 V
IR
——
10
A
Radiant Intensity QEE122
IF = 100 mA, tp = 20 ms
IE
4
—
16
mW/sr
Radiant Intensity QEE123
IF = 100 mA, tp = 20 ms
IE
8
——
mW/sr
Rise Time
IF = 100 mA
tr
—
800
—
ns
Fall Time
tf
—
800
—
ns
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