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参数资料
| 型号： | QIS4506002 |
| 厂商： | Powerex Inc |
| 文件页数： | 2/3页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD SINGLE 4500V 60A |
| 标准包装： | 3 |
| 配置： | 单一 |
| 电压 - 集电极发射极击穿（最大）： | 4500V |
| Vge, Ic时的最大Vce（开）： | 3.9V @ 15V，67A |
| 电流 - 集电极 (Ic)（最大）： | 60A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 9nF @ 10V |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS4506002
HV Single Discrete IGBT
60 Amperes/4500 Volts
Maximum Ratings, T j = 25 °C unless otherwise specified
Ratings
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current (DC, T C = 127°C)
Peak Collector Current (Pulsed)
Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Weight (Typical)
Symbol
V CES
V GES
I C
I CM
T j
T stg
—
—
QIS4506002
4500
±20
60
120*
-55 to 150
-55 to 125
30
20
Units
Volts
Volts
Amperes
Amperes
°C
°C
in-lb
Grams
Static Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Symbol
I CES
I GES
V GE(th)
V CE(sat)
Q G
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 7mA, V CE = 10V
I C = 60A, V GE = 15V, T j = 25°C
I C = 60A, V GE = 15V, T j = 125°C
V CC = 2250V, I C = 60A, V GE = 15V
Min.
—
—
4.5
—
—
—
Typ.
—
—
6.0
3.0
3.6
450
Max.
1.0
0.5
7.5
3.9**
—
—
Units
mA
μA
Volts
Volts
Volts
nC
Dynamic Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C ies
C oes
C res
Test Conditions
V GE = 0V, V CE = 10V
Min.
—
—
—
Typ.
9.0
0.65
0.2
Max.
—
—
—
Units
nF
nF
nF
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V CC = 2250V,
I C = 60A,
V GE1 = V GE2 = 15V,
R G = 120?
—
—
—
—
—
—
—
—
2.4
2.4
6.0
1.2
μs
μs
μs
μs
Turn-on Switching Energy
Turn-off switching Energy
E on
E off
T j = 125°C, I C = 60A, V CC = 2250V,
V GE = ± 15V, R G = 120?, L S = 180nH
—
—
250
170
—
—
mJ/P
mJ/P
Thermal and Mechanical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Symbol
R th(j-c)
R th(c-s)
Test Conditions
IGBT
λ grease = 1W/mK
Min.
—
—
Typ.
0.10
0.10
Max.
TBD
—
Units
°C/W
°C/W
Thermal Grease Applied
* Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed device rating.
**Pulse width and repetition rate should be such that device junction temperature rise is negligible.
2
01/10 Rev. 3
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