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| 型号： | QL4058-3PQ208M |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 58,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM |
| 中文描述： | 58000可用门QuickRAM ESP PLD的结合性能，密度和嵌入式内存 |
| 文件页数： | 12/23页 |
| 文件大小： | 271K |
| 代理商： | QL4058-3PQ208M |
12
www.quicklogic.com
2002 QuickLogic Corporation
QL4058 QuickRAM Data Sheet Rev H
Power-up Sequencing
Figure 8: Power-up Requirements
The following requirements must be met when powering up the device (see
Figure 8
):
When ramping up the power supplies keep (V
-V
)
≤
500 mV. Deviation from
this recommendation can cause permanent damage to the device.
V
CCIO
must lead V
CC
when ramping the device.
The power supply must take greater than or equal to 400 μs to reach VCC. Ramping
to V
CC
/V
CCIO
earlier than 400 μs can cause the device to behave improperly.
An internal diode is present in-between V
CC
and V
CCIO
, as shown in
Figure 9
.
Figure 9: Internal Diode Between VCC and VCCIO
V
V
CCIO
V
CC
(V
CCIO
-V
CC
)
MAX
Time
400 us
V
CC
VCC
VCCIO
Internal Logic
Cells, RAM
blocks, etc
IO Cells
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| QL4058-3PQ240C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:58,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM |
| QL4058-3PQ240I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:58,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM |
| QL4058-3PQ240M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:58,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM |
| QL4058-4PB456C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:58,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM |
| QL4058-4PB456I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Field Programmable Gate Array (FPGA) |
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