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参数资料
| 型号： | QM15TD-HB |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率开关使用绝缘型 |
| 文件页数： | 2/5页 |
| 文件大小： | 74K |
| 代理商： | QM15TD-HB |
Feb.1999
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
°
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Ratings
600
600
600
7
15
15
75
1
150
–40~+150
–40~+125
2500
1.47~1.96
15~20
90
ABSOLUTE MAXIMUM RATINGS
(Tj=25
°
C, unless otherwise noted)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
V
V
V
V
A
A
W
A
A
°
C
°
C
V
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM15TD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
μ
s
μ
s
μ
s
°
C/W
°
C/W
°
C/W
Limits
Min.
—
—
—
—
—
—
250
—
—
—
—
—
—
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=600V, V
EB
=2V
V
CB
=600V, Emitter open
V
EB
=7V
I
C
=15A, I
B
=60mA
–I
C
=15A (diode forward voltage)
I
C
=15A, V
CE
=2V
V
CC
=300V, I
C
=15A, I
B1
=90mA, I
B2
=–300mA
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
40
2.0
2.5
1.5
—
1.5
10
2.0
1.65
2.8
0.35
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