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参数资料
| 型号： | QM200DY-2H |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | CAP CER 10UF 10V Y5V 1206 |
| 中文描述： | 大功率开关使用绝缘型 |
| 文件页数： | 3/5页 |
| 文件大小： | 77K |
| 代理商： | QM200DY-2H |
Feb.1999
–1
10
–2
10
–1
10
1
10
7
5
4
3
2
10
7
5
4
3
2
1
10
2 3 4 5 7
2
10
2 3 4 5 7
3
10
I
B
=4A
–1
10
V
BE(sat)
V
CE(sat)
T
j
=25°C
T
j
=125°C
400
320
240
160
80
00
1
2
3
4
5
T
j
=25°C
I
B
=2A
I
B
=1A
I
B
=0.4A
I
B
=4A
I
B
=0.2A
1
10
7
5
4
3
2
10
7
5
4
3
2
1.8
3.8
3.4
3.0
2.6
2.2
V
CE
=2.8V
T
j
=25°C
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
V
CE
=2.8V
T
j
=25°C
T
j
=125°C
10
2
10
3
10
4
10
0
10
10
2
10
3
10
4
4
4
V
CE
=5.0V
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
1
0
T
j
=25°C
T
j
=125°C
4
4
4
I
C
=50A
I
C
=100A
I
C
=200A
0
10
1
10
1
10
7
5
4
3
2
1
10
2 3 4 5 7
2
10
2 3 4 5 7
3
10
10
7
5
4
3
3
2
t
s
t
f
t
on
T
j
=25°C
T
j
=125°C
–I
B2
=4A
I
B1
=
V
CC
=600V
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
C
I
C
D
h
F
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
B
I
B
C
V
V
C
S
V
C
,
B
S
t
o
,
s
,
f
μ
s
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM200DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
相关PDF资料 |
PDF描述 |
|---|---|
| QM200DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200DY24B | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200DY2H | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
| QM200DY2HB | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
| QM200HA24 | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| QM200DY2HB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
| QM200DY-2HB | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200DY-H | 制造商:n/a 功能描述:Darlington Module |
| QM200DY-HB | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200HA24 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
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