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参数资料
| 型号： | QM300DY-2H |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率开关使用绝缘型 |
| 文件页数： | 4/5页 |
| 文件大小： | 82K |
| 代理商： | QM300DY-2H |
Feb.1999
3
10
2
10
10
10
–1
10
–2
10
7
–3
10
–1
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
800
00
200
400
600
800
600
400
200
1000
T
j
=125°C
I
B2
=–12A
I
B2
=–6A
2
10
7
5
4
3
2
10
7
5
4
3
2
0
10
2 3 4 5 7
0
10
2 3 4 5 7
1
10
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
B1
=6A
I
C
=300A
t
s
t
f
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
7
5
3
2
0
T
C
=25°C
NON–REPETITIVE
DC
2
10
3
10
1
10
0
10
3
10
2
10
10
10
4
4
4
1m
100μs
50μs
20
7
5
3
2
7
5
3
2
7
5
3
2
0
0.4
0.8
1.2
1.6
2.0
T
j
=25°C
T
j
=125°C
7
5
3
2
7
5
3
2
5
3
2
0.08
0
7
5
3
2
10
0
10
10
4
4
4
4
0.07
0.06
0.05
0.04
0.03
0.02
0.01
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FOWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM300DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
相关PDF资料 |
PDF描述 |
|---|---|
| QM300DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 300A I(C) |
| QM300DY24B | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 300A I(C) |
| QM300DY2H | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 300A I(C) |
| QM300DY2HB | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 300A I(C) |
| QM300HA24 | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.2KV V(BR)CEO | 300A I(C) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| QM300DY2HB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 300A I(C) |
| QM300DY-2HB | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM300HA-2 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM300HA24 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.2KV V(BR)CEO | 300A I(C) |
| QM300HA-24 | 制造商:n/a 功能描述:Darlington Module |
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