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参数资料
| 型号： | QM30DY-H |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | CAP CER 1000PF 100V X7R 10% 0805 |
| 中文描述： | 中功率开关使用绝缘型 |
| 文件页数： | 3/5页 |
| 文件大小： | 69K |
| 代理商： | QM30DY-H |
Feb.1999
10
10
7
5
4
3
2
–1
7
5
4
3
2
1.0
1.4
1.8
2.2
2.6
3.0
V
CE
=2.0V
T
j
=25°C
1
10
7
5
4
3
2
10
7
5
4
3
2
–1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE(sat)
V
BE(sat)
T
j
=25°C
T
j
=125°C
I
B
=0.4A
100
80
60
40
20
00
1
2
3
4
5
T
j
=25°C
I
B
=2.0A
I
B
=0.3A
I
B
=0.5A
I
B
=0.1A
I
B
=1.0A
3
10
7
5
4
3
2
2
10
7
5
4
3
2
1
10
10
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE
=2.0V
T
j
=25°C
T
j
=125°C
V
CE
=5.0V
5
4
2
2
10
7
5
4
3
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
7
10
3
–1
10
T
j
=25°C
T
j
=125°C
t
f
t
on
t
s
V
CC
=300V
I
B1
=–I
B2
=0.6A
10
–1
10
7
5
4
3
2
–2
10
7
5
4
3
2
0
1
2
3
4
5
I
C
=10A
T
j
=25°C
T
j
=125°C
I
C
=30A
I
C
=20A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
C
I
C
D
h
F
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
B
I
B
C
V
V
C
S
V
C
,
B
S
t
o
,
s
,
f
μ
s
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
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|---|---|
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相关代理商/技术参数 |
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|---|---|
| QM30DY-HB | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM30E2Y | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM30E2Y2H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 30A I(C) |
| QM30E2Y-2H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM30E2Y-H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 30A I(C) |
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