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参数资料
| 型号： | QM30DY-HB |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率开关使用绝缘型 |
| 文件页数： | 4/5页 |
| 文件大小： | 74K |
| 代理商： | QM30DY-HB |
Feb.1999
2
10
1
10
0
10
–3
10
–2
10
7
–1
10
0
10
2
10
1
7
5
3
2
10
0
10
–1
10
10
3
10
2
10
1
10
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
C
=25°C
NON–REPETITIVE
50
S
1m
S
DC
10
S
1
10
7
5
4
3
2
10
7
5
4
3
2
–1
10
10
–1
2 3 4 5 7
0
10
2 3 4 5 7
1
10
V
CC
=300V
I
B1
=60mA
T
j
=25°C
T
j
=125°C
I
C
=30A
t
f
t
s
80
20
00
100
800
60
40
300 400 500
70
50
30
10
T
j
=125°C
I
B2
=–3.0A
I
B2
=–0.6A
200
600 700
100
90
60
50
40
20
00
160
20
40
60
80 100 120 140
80
10
70
30
2
10
10
7
5
4
3
2
0
0.4
10
7
5
4
3
2
0.8
1.2
1.6
2.0
2.4
T
j
=25°C
T
j
=125°C
7
5
3
2
7
5
3
2
5
3
2
0.5
0.4
0.3
0.1
0
4
4
4
2 3 45 7
0.2
7
5
3
2
4
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM30DY-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
相关PDF资料 |
PDF描述 |
|---|---|
| QM30DY-H | CAP CER 1000PF 100V X7R 10% 0805 |
| QM30 | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM30DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 30A I(C) |
| QM30E2Y2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 30A I(C) |
| QM30E2Y-H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 30A I(C) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| QM30E2Y | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM30E2Y2H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 30A I(C) |
| QM30E2Y-2H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM30E2Y-H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 30A I(C) |
| QM30E3Y2H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 30A I(C) |
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