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参数资料
| 型号： | QM30HA-H |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | CAP CER 10000PF 100V X7R 10%0805 |
| 中文描述： | 中功率开关使用绝缘型 |
| 文件页数： | 5/5页 |
| 文件大小： | 61K |
| 代理商： | QM30HA-H |
Feb.1999
0
10
–1
10
–2
10
–3
10
1
10
7
0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
10
0
10
1
10
2
10
–1
10
10
1
10
0
10
2
10
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
100
200
300
400
500
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=–I
B2
=0.6A
I
rr
Q
rr
t
rr
7
5
3
2
7
5
3
2
7
5
3
2
0.4
0.8
1.2
1.6
2.0
0
3
2
5
3
2
4
4
4
4
4
5
I
r
r
μ
c
S
–
C
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM30HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
t
r
μ
s
相关PDF资料 |
PDF描述 |
|---|---|
| QM30HC-2H | INDUCTION HEATER USE NON-INSULATED TYPE |
| QM30HC2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.6KV V(BR)CEO | 30A I(C) |
| QM30HQ24 | TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CEO | 30A I(C) |
| QM30HY2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 30A I(C) |
| QM30HQ-24 | DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| QM30HA-HB | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM30HC2H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.6KV V(BR)CEO | 30A I(C) |
| QM30HC-2H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:INDUCTION HEATER USE NON-INSULATED TYPE |
| QM30HQ24 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CEO | 30A I(C) |
| QM30HQ-24 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE |
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