参数资料
型号: QSB363C.ZR
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 光敏三极管
英文描述: PHOTO TRANSISTOR DETECTOR
封装: PLASTIC PACKAGE-2
文件页数: 1/5页
文件大小: 471K
代理商: QSB363C.ZR
2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
September 2005
QSB363C Rev. 1.0.2
QSB363C
Subminiature
Plastic
Silicon
Infrared
Phototransistor
QSB363C
Subminiature Plastic Silicon Infrared Phototransistor
Features
■ NPN Silicon Phototransistor
■ T-3/4 (2mm) Surface Mount Package
■ Medium Wide Beam Angle, 24°
■ Clear Plastic Package
■ Matched Emitters: QEB363 or QEB373
■ Tape & Reel Option (See Tape & Reel Specications)
■ Lead Form Options: Gullwing, Yoke, Z-Bend
Description
The QSB363
C is a silicon phototransistor encapsulated in a clear
infrared T-3/4 package.
Package Dimensions
SCHEMATIC
EMITTER
COLLECTOR
0.074 (1.9)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
EMITTER
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of
± .010 (.25) on all non nominal dimensions
unless otherwise specified.
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相关代理商/技术参数
参数描述
QSB363GR 功能描述:光电晶体管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
QSB363YR 功能描述:光电晶体管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
QSB363ZR 功能描述:光电晶体管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
QSB373ZR 功能描述:光电晶体管 T-3- 4 PHOTO XSTR DETECTOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
QSB-40-01 功能描述:风扇电线及配件 40mm EMI FILTR SHLD RoHS:否 制造商:ebm-papst 类型:Finger Guard 适合风扇大小:120 mm 系列: