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| 型号： | QSBT40-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | DIODE SCHOTTKY BARRIER 30VSOT363 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 25V |
| 电压 - 击穿： | 30V |
| 电极标记： | 4 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 剪切带 (CT) |
| 其它名称： | QSBT40 QSBT40DICT |
QSBT40
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 6)
Non-Repetitive Peak Forward Surge Current @ t < 1.0s
Symbol
V RRM
V RWM
V R
I FM
I FSM
Value
30
200
600
Unit
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance Junction to Ambient Air (Note 6)
Operating Temperature Range
Storage Temperature Range
Symbol
P D
R θ JA
T J
T STG
Value
200
625
-55 to +125
-65 to +125
Unit
mW
° C/W
° C
° C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Symbol
V (BR)R
Min
30
Typ
?
Max
?
Unit
V
Test Condition
I R = 100 μ A
280
I F = 0.1mA, tp < 300μS
Forward Voltage
V F
?
?
350
450
mV
I F = 1.0mA, tp < 300μS
I F = 10mA, tp < 300μS
550
1000
I F = 30mA, tp < 300μS
I F = 100mA, tp < 300μS
Reverse Current (Note 7)
Total Capacitance
Reverse Recovery Time
I R
C T
t rr
?
?
?
?
10.0
6.5
?
2
?
5.0
μ A
pF
ns
V R = 25V
V R = 0, f = 1.0MHz (Note 8)
V R = 0, f = 1.0MH Z (Note 9)
I F = I R = 10mA,
I rr = 0.1 x I R , R L = 100 Ω
Notes:
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
8. At V R = 0V, DL(X) to V CC or GND.
9. At V R = 0V, between Data Lines (e.g., DL1 and DL4).
200
150
100
50
0
0
25
50
75
100 125
150
175
200
T A , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
QSBT40
Document number: DS30195 Rev. 16 - 2
2 of 4
September 2012
? Diodes Incorporated
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