参数资料
型号: QT115-D
英文描述: IC-QPROX SENSOR
中文描述: 集成电路量研传感器
文件页数: 9/9页
文件大小: 78K
代理商: QT115-D
Calibration and Drift Compensation
Calibration and drift compensation operate similarly to the QT110. With large values of Cs and small values of
Cx, drift compensation will appear to operate more slowly than with the reverse. Note that the positive and
negative drift compensation rates are different; the sensor will compensate more quickly for the removal of an
object than it will to the introduction of an object.
The QT1115 uses a fixed recalibration timeout of 10 seconds.
Response Time
The QT115's response time is entirely dependent on the burst rate. In Master mode the nominal burst rate is
40ms, and 3 successive bursts are required to confirm a detection, giving a nominal 120ms response time.
In slave mode, the burst rate and hence response time are dependent on the input sync pulse rate. Faster sync
pulse rates will lead to faster response times.
HeartBeat Signal
The QT115's HeartBeat pulse works exactly the same as in the QT110 except that the HeartBeat rate is the
same as the burst rate. In Master mode, the HeartBeat signal occurs just before the acquisition burst. In slave
mode, it occurs just after receipt of the slave pulse on pin 4.
As with the QT110, the HB signal can be
suppressed if not wanted by a variety of simple methods.
Notes on Daisy Chaining QT115's
The QT115 is intended to be daisy-chained for the purpose of allowing each of the sensors to operate without
interference from other devices in the chain. This allows electrodes from each device to be placed immediately
adjacent the other electrodes with only the barest of gaps.
Individual devices in the chain can have unique sensitivities. QT113-style sensing allow for very high sensitivity
levels if required. One device can be used with a large metal area to create a prox detector capable of many
centimeters range, for example to activate the panel, equipment, or a light upon a mere hand-wave. The other
devices in the chain can be used to implement low-gain touch switches that must be contacted by a fingertip for
activation. The net effect of this configuration can be quite dramatic.
The only limitation is that the sum of the burst lengths, which depends on load Cx and the Cs capacitor, must
not be so long that burst of the last device in the chain overlaps the burst of the first device. Should this occur,
the first and last devices may interfere with each other if the electrodes and wiring are adjacent to each other.
One simple solution to this problem is to physically separate the traces and electrodes from devices that have
overlapping bursts.
Package Marking
DIP Package: DIP devices are marked 'QT115'
SO8 Package: Marked 'QT1' and also laserscribed '5'
3 April 2000
相关PDF资料
PDF描述
QT115-S IC-SMD-QPROX SENSOR
QT114-D IC-QPROX SENSOR
QT114-S IC-SMD-QPROX SENSOR
QT12C-SERIES Peripheral IC
QT12E-SERIES Peripheral IC
相关代理商/技术参数
参数描述
QT115-DG 制造商:Quantum Corp 功能描述:IC QPROX SENSOR DIP8 115
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QT115H 制造商:QUANTUM 制造商全称:QUANTUM 功能描述:QT 11x Series Variations
QT115-IS 功能描述:SENSOR IC TOUCH/PROXMTY 1CH8SOIC RoHS:否 类别:集成电路 (IC) >> 数据采集 - 触摸屏控制器 系列:QProx™ 标准包装:96 系列:- 类型:- 触摸面板接口:- 输入数/键:- 分辨率(位):- 评估套件:* 数据接口:- 数据速率/采样率 (SPS,BPS):- 电压基准:- 电源电压:- 电流 - 电源:- 工作温度:- 安装类型:表面贴装 封装/外壳:16-TSSOP(0.173",4.40mm 宽) 供应商设备封装:16-TSSOP 包装:带卷 (TR)
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