参数资料
型号: R0809LS10D
厂商: WESTCODE SEMICONDUCTORS LTD
元件分类: 晶闸管
英文描述: 1691 A, 1000 V, SCR
封装: 101A336, 3 PIN
文件页数: 5/12页
文件大小: 259K
代理商: R0809LS10D
WESTCODE
Positive development in power electronics
R0809LS10x
Data Sheet. Type R0809LS10x Issue 1
Page 2 of 12
March, 2001
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
2.52
ITM=1400A
V
V0
Threshold voltage
-
2.1
V
rS
Slope resistance
-
0.3
m
dv/dt
Critical rate of rise of off-state voltage
200
-
VD=80% VDRM
V/
s
IDRM
Peak off-state current
-
70
Rated VDRM
mA
IRRM
Peak reverse current
-
70
Rated VRRM
mA
VGT
Gate trigger voltage
-
3.0
Tj=25°C
V
IGT
Gate trigger current
-
300
Tj=25°C
VD=10V, IT=3A
mA
IH
Holding current
-
1000
Tj=25°C
mA
tgd
Gate controlled turn-on delay time
-
0.5
1.0
tgt
Turn-on time
-
0.9
2.0
VD=67% VDRM, ITM=1500A, di/dt=60A/s,
IFG=2A, tr=0.5s, Tj=25°C
s
Qrr
Recovered charge
-
140
C
Qra
Recovered charge, 50% Chord
-
60
C
Irm
Reverse recovery current
-
80
A
trr
Reverse recovery time
-
2.0
ITM=1000A, tp=1000s, di/dt=60A/s,
Vr=50V
s
--
15
ITM=1000A, tp=1000s, di/dt=60A/s,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/s
tq
Turn-off time (note 2)
12
-
20
ITM=1000A, tp=1000s, di/dt=60A/s,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/s
s
-
0.032
Double side cooled
K/W
Rth(j-hs)
Thermal resistance, junction to heatsink
-
0.064
Single side cooled
K/W
F
Mounting force
10
-
20
kN
Wt
Weight
-
340
-
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/s) is represented by an ‘x’ in the device part number. See ordering information
for details of tq codes.
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