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参数资料
| 型号： | R0830LS12E |
| 厂商： | WESTCODE SEMICONDUCTORS LTD |
| 元件分类： | 晶闸管 |
| 英文描述： | 1713 A, 1200 V, SCR |
| 封装： | 101A336, 3 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 232K |
| 代理商： | R0830LS12E |
WESTCODE
Positive development in power electronics
R0830LS12x to R0830LS14x
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1
Page 2 of 12
April, 2001
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
2.4
ITM=1400A
V
V0
Threshold voltage
-
1.9
V
rs
Slope resistance
-
0.357
m
dv/dt
Critical rate of rise of off-state voltage
200
-
VD=80% VDRM, linear ramp
V/
s
IDRM
Peak off-state current
-
70
Rated VDRM
mA
IRRM
Peak reverse current
-
70
Rated VRRM
mA
VGT
Gate trigger voltage
-
3.0
V
IGT
Gate trigger current
-
300
Tj=25°C
VD=10V, IT=3A
mA
IH
Holding current
-
1000
Tj=25°C
mA
tgt
Gate-controlled turn-on delay time
-
0.4
1.0
tgd
Turn-on time
-
0.8
2.0
VD=67% VDRM, IT=1500A, di/dt=60A/s,
IFG=2A, tr=0.5s, Tj=25°C
Qrr
Recovered charge
-
285
-
C
Qra
Recovered charge, 50% Chord
-
110
130
C
Irr
Reverse recovery current
-
95
-
A
trr
Reverse recovery time
-
2.7
-
ITM=1000A, tp=1000s, di/dt=60A/s,
Vr=50V
s
--
30
ITM=1000A, tp=1000s, di/dt=60A/s,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/s
tq
Turn-off time (note 2)
25
-
35
ITM=1000A, tp=1000s, di/dt=60A/s,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/s
s
-
0.032
Double side cooled
K/W
Rth(j-hs)
Thermal resistance, junction to heatsink
-
0.064
Single side cooled
K/W
F
Mounting force
10
-
20
kN
Wt
Weight
-
340
-
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/s) is represented by an ‘x’ in the device part number. See ordering information
for details of tq codes.
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