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参数资料
| 型号： | R1331NS12A |
| 厂商： | WESTCODE SEMICONDUCTORS LTD |
| 元件分类： | 晶闸管 |
| 英文描述： | 2687 A, 1200 V, SCR |
| 文件页数： | 1/12页 |
| 文件大小： | 685K |
| 代理商： | R1331NS12A |
Data Sheet. Type R1331NS10# to R1331NS12# Issue 1
Page 1 of 12
December, 2002
Date:- 17 Dec, 2002
Data Sheet Issue:- 1
Distributed Gate Thyristor
Type R1331NS10# to R1331NS12#
(Old Type Number: D450CH02-12)
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VDRM
Repetitive peak off-state voltage, (note 1)
1000-1200
V
VDSM
Non-repetitive peak off-state voltage, (note 1)
1000-1200
V
VRRM
Repetitive peak reverse voltage, (note 1)
1000-1200
V
VRSM
Non-repetitive peak reverse voltage, (note 1)
1100-1300
V
OTHER RATINGS
MAXIMUM
LIMITS
UNITS
IT(AVM)
Maximum average on-state current, Tsink=55°C, (note 2)
1331
A
IT(AVM)
Maximum average on-state current. Tsink=85°C, (note 2)
878
A
IT(AVM)
Maximum average on-state current. Tsink=85°C, (note 3)
503
A
IT(RMS)
Nominal RMS on-state current, Tsink=25°C, (note 2)
2687
A
IT(d.c.)
D.C. on-state current, Tsink=25°C, (note 4)
2191
A
ITSM
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
18.2
kA
ITSM2
Peak non-repetitive surge tp=10ms, Vrm
≤10V, (note 5)
20.0
kA
I
2tI2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
1.66×10
6
A
2s
I
2t
I
2t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
2.0×10
6
A
2s
Critical rate of rise of on-state current (repetitive), (Note 6)
1000
A/s
(di/dt)cr
Critical rate of rise of on-state current (non-repetitive), (Note 6)
1500
A/s
VRGM
Peak reverse gate voltage
5
V
PG(AV)
Mean forward gate power
5
W
PGM
Peak forward gate power
30
W
Tj op
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +150
°C
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% VDRM, IFG=2A, tr
≤0.5s, Tcase=125°C.
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