参数资料
型号: R1EX24064ASAS0A#U0
厂商: Renesas Electronics America
文件页数: 15/26页
文件大小: 0K
描述: IC EEPROM 64K 400KHZ 8SOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 64K (8K x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 标准包装
其它名称: R1EX24064ASAS0A#U0DKR
R1EX24064AxxS0A
Page Write:
The EEPROM is capable of the page write operation which allows any number of bytes up to 32 bytes to
be written in a single write cycle. The page write is the same sequence as the byte write except for
inputting the more write data. The page write is initiated by a start condition, device address word,
memory address(n) and write data (Dn) with every ninth bit acknowledgment. The EEPROM enters the
page write operation if the EEPROM receives more write data (Dn+1) instead of receiving a stop
condition. The a0 to a4 address bits are automatically incremented upon receiving write data (Dn+1).
The EEPROM can continue to receive write data up to 32 bytes. If the a0 to a4 address bits reaches the
last address of the page, the a0 to a4 address bits will roll over to the first address of the same page and
previous write data will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving
write data and enters internally-timed write cycle.
Page Write Operation
WP
Device
1st Memory
2nd Memory
64k
address
1010
W
address (n)
address (n)
Write data (n)
Write data (n+m)
Start
ACK
R/W
ACK
ACK
ACK
ACK
Stop
Note: 1. Don't care bit
REJ03C0332-0200 Rev.2.00 Oct. 26, 2009
Page 13 of 22
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