参数资料
型号: R1EX24512BSAS0A#S0
厂商: Renesas Electronics America
文件页数: 7/19页
文件大小: 0K
描述: IC EEPROM 512K 1MHZ 8SOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 512K (64K x 8)
速度: 400kHz,1MHz
接口: I²C,2 线串口
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 标准包装
其它名称: R1EX24512BSAS0A#S0DKR
R1EX24512BSAS0A/R1EX24512BTAS0A
Device Address (A0, A1, A2)
Eight devices can be wired for one common data bus line as maximum. Device address pins are used to distinguish
each device and device address pins should be connected to V CC or V SS . When device address code provided from SDA
pin matches corresponding hard-wired device address pins A0 to A2, that one device can be activated.
Pin Connections for A0 to A2
Pin connection
Memory size Max connect number
A2
A1
A0
Note
512k bit
8
V CC /V SS * 1
V CC /V SS * 1
V CC /V SS * 1
Note:
1. During floating, "V CC /V SS " are fixed to V SS .
Write Protect (WP)
When the Write Protect pin (WP) is high, the write protection feature is enabled and operates as shown in the following
table. Also, acknowledgment "0" is outputted after inputting device address and memory address. After inputting write
data, acknowledgment "1"(NO ACK) is outputted.
When the WP is low, write operation for all memory arrays are allowed. The read operation is always activated
irrespective of the WP pin status.
Write Protect Area
Write protect area
WP pin status
V IH
V IL
R10DS0025EJ0001 Rev.0.01
Sep, 01, 2010
512k bit
Full (512k bit)
Normal read/write operation
Page 7 of 17
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