参数资料
型号: R1EX25016ATA00A#S0
厂商: Renesas Electronics America
文件页数: 16/24页
文件大小: 0K
描述: IC EEPROM 16K 5MHZ 8TSSOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 16K (2K x 8)
速度: 3MHz,5MHz
接口: SPI 串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 标准包装
其它名称: R1EX25016ATA00A#S0DKR
R1EX25008Axx00A/R1EX25016Axx00A
Read from Memory Array (READ):
As shown in the following figure, to send this instruction to the device, chip select ( S ) is first driven low. The bits of
the instruction byte and the address bytes are then shifted in, on serial data input (D). The addresses are loaded into an
internal address register, and the byte of data at that address is shifted out, on serial data output (Q).
If chip select ( S ) continues to be driven low, the internal address register is automatically incremented, and the byte of
data at the new address is shifted out.
When the highest address is reached, the address counter rolls over to zero, allowing the Read cycle to be continued
indefinitely. The whole memory can, therefore, be read with a single READ instruction.
The Read cycle is terminated by driving chip select ( S ) high. The rising edge of the chip select ( S ) signal can occur at
any time during the cycle. The addressed first byte can be any byte within any page. The instruction is not accepted,
and is not executed, if a Write cycle is currently in progress.
Read from Memory Array (READ) Sequence
S
W
V IH
V IL
V IH
V IL
C
V IH
V IL
0
1
2
3
4
5
6
7
8
9 10
20 21 22 23 24 25 26 27 28 29 30 31
Instruction
16-Bit Address
D
V IH
V IL
A15 A14 A13
A3 A2 A1
A0
Data Out 1
Data Out 2
Q
High-Z
7
6
5
4
3
2
1
0
7
Note:
1. Depending on the memory size, as shown in the following table, the most significant address bits are don’t
care.
Address Range Bits
Address bits
Device
A10 to A0
R1EX25016A
A9 to A0
R1EX25008A
Notes: 1. b15-b11 are don’t care on the R1EX25016A
2. b15-b10 are don’t care on the R1EX25008A
REJ03C0385-0100 Rev.1.00 Jul.22.2009
Page 14 of 20
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