参数资料
型号: R1LP0408CSC-5SC
厂商: Renesas Technology Corp.
英文描述: 4M SRAM (512-kword 】 8-bit)
中文描述: 4分的SRAM(512 - KWord的】8位)
文件页数: 12/14页
文件大小: 94K
代理商: R1LP0408CSC-5SC
R1LP0408C-C Series
Rev.2.00, May.26.2004, page 7 of 12
AC Characteristics
(Ta =
20 to +70°C, V
CC = 5 V
± 10%, unless otherwise noted.)
Test Conditions
Input pulse levels: V
IL = 0.4 V, VIH = 2.4 V
Input rise and fall time: 5 ns
Input and output timing reference levels: 1.5 V
Output load: 1 TTL Gate + C
L (50 pF) (R1LP0408C-5SC)
1 TTL Gate + CL (100 pF) (R1LP0408C-7LC)
(Including scope and jig)
Read Cycle
R1LP0408C-C
-5SC
-7LC
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Read cycle time
tRC
55
70
ns
Address access time
tAA
55
70
ns
Chip select access time
tCO
55
70
ns
Output enable to output valid
tOE
25
35
ns
Chip select to output in low-Z
tLZ
10
10
ns
2
Output enable to output in low-Z
tOLZ
5
5
ns
2
Chip deselect to output in high-Z
tHZ
0
20
0
25
ns
1, 2
Output disable to output in high-Z
tOHZ
0
20
0
25
ns
1, 2
Output hold from address change
tOH
10
10
ns
相关PDF资料
PDF描述
R1LP0408CSC-7LC 4M SRAM (512-kword 】 8-bit)
R1LP0408CSP-5SC 4M SRAM (512-kword 】 8-bit)
R1LP0408CSP-7LC 4M SRAM (512-kword 】 8-bit)
R1RP0408D 4M High Speed SRAM (512-kword ?8-bit)
R1RP0416D 4M High Speed SRAM (256-kword X 16-bit)
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