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参数资料
| 型号： | R1LV1616HBG-I |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| 中文描述： | 宽温版本16米的SRAM（1 - Mword】16位） |
| 文件页数： | 6/15页 |
| 文件大小： | 124K |
| 代理商： | R1LV1616HBG-I |
R1LV1616HBG-I Series
Rev.1.00, Sep.21.2005, page 6 of 13
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Test conditions
Vin = 0 V
V
I/O
= 0 V
Parameter
Symbol
Cin
C
I/O
Min
Typ
Max
8
10
Unit
pF
pF
Note
1
1
Input capacitance
Input/output capacitance
Note: 1. This parameter is sampled and not 100% tested.
AC Characteristics
(Ta =
40 to +85
°
C, V
CC
= 2.7 V to 3.6 V)
Test Conditions
Input pulse levels: V
IL
= 0.4 V, V
IH
= 2.4 V
Input rise and fall time: 5 ns
Input and output timing reference levels: 1.4 V
Output load: See figures (Including scope and jig)
50pF
Dout
RL=500
1.4 V
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PDF描述 |
|---|---|
| R1LV1616RBG-5SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RBG-5SR | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-5SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-5SR | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-7SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV1616H-I | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit) |
| R1LV1616HSA-4LI | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-4SI | 制造商:Renesas Electronics 功能描述:2M~8 / 1M~16 45ns 3V 48TSOP Tray 制造商:Renesas Electronics Corporation 功能描述:SRAM 16MBIT 3V 45NS 48TSOP 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 16M-Bit 2M/1M x 8/16-Bit 45ns 48-Pin TSOP-I |
| R1LV1616HSA-4SI#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 16M-Bit 2M/1M x 8/16-Bit 45ns 48-Pin TSOP-I Tray |
| R1LV1616HSA-4SI#BT | 制造商:Renesas Electronics Corporation 功能描述:Memory,Low-pwr SRAM,16M bit,x8 |
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