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参数资料
| 型号： | R1LV1616HSA-5SI |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| 中文描述： | 宽温版本16米的SRAM（1 - Mword】16位/ 2 - Mword】8位） |
| 文件页数： | 18/21页 |
| 文件大小： | 159K |
| 代理商： | R1LV1616HSA-5SI |
R1LV1616H-I Series
Rev.1.01, Nov.18.2004, page 18 of 19
Low V
CC
Data Retention Characteristics
(Ta =
40 to +85
°
C)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
*
2, 3
V
CC
for data retention
V
DR
1.5
3.6
V
Vin
≥
0 V
(1) 0 V
≤
CS2
≤
0.2 V or
(2) CS2
≥
V
CC
0.2 V,
CS1#
≥
V
CC
0.2 V or
(3) LB# = UB#
≥
V
CC
0.2 V,
CS2
≥
V
CC
0.2 V,
CS1#
≤
0.2 V
V
CC
= 3.0 V, Vin
≥
0 V
(1) 0 V
≤
CS2
≤
0.2 V or
(2) CS2
≥
V
CC
0.2 V,
CS1#
≥
V
CC
0.2 V or
(3) LB# = UB#
≥
V
CC
0.2 V,
CS2
≥
V
CC
0.2 V,
CS1#
≤
0.2 V
Average value
-4SI
-5SI
I
CCDR
0.5
*
1
8
μ
A
Data retention
current
-4LI
I
CCDR
0.5
*
1
25
μ
A
Chip deselect to data
retention time
t
CDR
0
ns
See retention waveforms
Operation recovery time
Notes: 1. Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and not guaranteed.
2. BYTE#
≥
V
CC
0.2 V or BYTE#
≤
0.2 V
3. CS2 controls address buffer, WE# buffer, CS1# buffer, OE# buffer, LB#, UB# buffer and Din
buffer. If CS2 controls data retention mode, Vin levels (address, WE#, OE#, CS1#, LB#, UB#,
I/O) can be in the high impedance state. If CS1# controls data retention mode, CS2 must be
CS2
≥
V
CC
0.2 V or 0 V
≤
CS2
≤
0.2 V. The other input levels (address, WE#, OE#, LB#, UB#,
I/O) can be in the high impedance state.
t
R
5
ms
相关PDF资料 |
PDF描述 |
|---|---|
| R1LV1616HBG-4SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616HBG-5SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616HBG-I | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616RBG-5SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV1616HSA-5SI#B0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 16M-Bit 2M/1M x 8/16-Bit 55ns 48-Pin TSOP-I Bulk 制造商:Renesas Electronics Corporation 功能描述:SRAM, 16Mbit, 2Mx8/1Mx16, 3V, |
| R1LV1616HSA-5SIB0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM, 16Mbit, 2Mx8/1Mx16, 3V, ECC, 55ns |
| R1LV1616R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:16Mb superSRAM (1M wordx16bit) |
| R1LV1616R_07 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616R_0709 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
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