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参数资料
| 型号： | R1LV1616RSA-5SR |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| 中文描述： | 16Mb的先进LPSRAM（100万wordx16bit / 200万wordx8bit） |
| 文件页数： | 15/16页 |
| 文件大小： | 113K |
| 代理商： | R1LV1616RSA-5SR |
R1LV1616R Series
REJ03C0101-0300Z Rev.3.00 2007.08.28
page 15 of 15
Data Retention Characteristics
Note 1. Typical parameter of
Icc
DR
indicates the value for the center of distribution at Vcc=3.0V and not 100% tested.
2. BYTE# pin supported only by TSOP and uTSOP types. BYTE#
≥
Vcc-0.2V or BYTE#
≤
0.2V
3. Also CS2 controls address buffer, WE# buffer ,CS1# buffer ,OE# buffer ,LB# ,UB# buffer and Din buffer .If CS2
controls data retention mode,Vin levels (address, WE# ,OE#,CS1#,LB#,UB#,I/O) can be in the high impedance
state. If CS1# controls data retention mode, CS2 must be CS2
≥
Vcc-0.2V or 0V
≤
CS2
≤
0.2V. The other input
levels (address, WE# ,OE#,CS1#,LB#,UB#,I/O) can be in the high impedance state.
Data Retention timing Waveform (1) (LB#,UB# Controlled)
Data Retention timing Waveform (2) (CS1# Controlled)
Data Retention timing Waveform (3) (CS2 Controlled)
LB#
UB#
Vcc
t
CDR
t
R
2.4V
2.4V
2.70V
LB# =UB#
≥
Vcc-0.2V
CS2
Vcc
t
CDR
t
R
0.2V
0.2V
2.70V
0V
≤
CS2
≤
0.2V
Vcc
CS1#
t
CDR
t
R
2.4V
2.4V
2.70V
CS1#
≥
Vcc-0.2V
~+85oC
μA
40
-
-
ms
-
-
5
t
R
Operation recovery time
See retention waveform
ns
-
-
0
t
CDR
Chip deselect to data retention time
~+70oC
μA
25
-
-
~+40oC
μA
12
4
-
Vcc=3.0V,Vin
≥
0V
(1) 0V
≤
CS2
≤
0.2V or
(2) CS2
≥
Vcc-0.2V,
CS1#
≥
Vcc-0.2V or
(3) LB# =UB#
≥
Vcc-0.2V,
CS2
≥
Vcc-0.2V,
CS1#
≤
0.2V
Average value
Test conditions
*2,3
Unit
Typ.
*1
~+25oC
μA
6
2
-
Icc
DR
Data retention current
V in
≥
0V
(1) 0V
≤
CS2
≤
0.2V or
(2) CS2
≥
Vcc-0.2V,
CS1#
≥
Vcc-0.2V or
(3) LB# =UB#
≥
Vcc-0.2V,
CS2
≥
Vcc-0.2V,
CS1#
≤
0.2V
V
3.6
-
2.0
V
DR
Vcc for data retention
Max.
MIn.
Symbol
Parameter
相关PDF资料 |
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|---|---|
| R1LV1616RSA-7SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-7SR | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-8SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-8SR | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV1616RSA-7S | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-7SI | 制造商:Renesas Electronics Corporation 功能描述:SRAM 16MBIT 3V 70NS 48TSOP 制造商:Renesas Electronics Corporation 功能描述:SRAM,Low Pow,16Mb,1Mx16/2Mx8,T |
| R1LV1616RSA-7SI#B0 | 制造商:Renesas Electronics Corporation 功能描述:16MB (1MX16) FAST ASYNCH, BULK - Bulk 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 16M-Bit 2M/1M x 8/16-Bit 70ns 48-Pin TSOP-I Bulk 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 16MBIT 70NS 48TSOP |
| R1LV1616RSA-7SI#S0 | 制造商:Renesas Electronics Corporation 功能描述:ADVANCED LPSRAM, 16MB,1MX16, PBFREE/T&R - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 16MBIT 70NS 48TSOP |
| R1LV1616RSA-7SI(#B0) | 制造商:Renesas Electronics Corporation 功能描述: |
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