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参数资料
| 型号： | R1LV1616RSA-7SI |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| 中文描述： | 16Mb的先进LPSRAM（100万wordx16bit / 200万wordx8bit） |
| 文件页数： | 9/16页 |
| 文件大小： | 113K |
| 代理商： | R1LV1616RSA-7SI |
R1LV1616R Series
REJ03C0101-0300Z Rev.3.00 2007.08.28
page 9 of 15
Write Cycle
Note0
.
55ns parts can be supported under the condition of the input timing limitation toward SRAM on
customer’s system. Please contact our sales office in your region, in case of the inquiry for 55ns parts.
1
.
t
CHZ,
t
OHZ,
t
WHZ
and
t
BHZ
are defined as the time at which the outputs achieve the open circuit conditions
and are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. AT any given temperature and voltage condition,
t
HZ
max is less than
t
LZ
min both for a given device and
form device to device.
4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#.
A write begins at the latest transition among CS1# going low, CS2 going high, WE# going low and LB#
going low or UB# going low .
A write ends at the earliest transition among CS1# going high, CS2 going low, WE# going high and LB#
going high or UB# going high.
t
WP
is measured from the beginning of write to the end of write.
5.
t
CW
is measured from the later of CS1# going low or CS2 going high to end of write.
6.
t
AS
is measured the address valid to the beginning of write.
7.
t
WR
is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle.
0
0
5
0
25
0
0
50
40
55
50
55
Min.
R1LV1616R**-
5S (Note0)
20
20
-
-
-
-
-
-
-
-
-
-
Max.
1,2
ns
30
0
25
0
t
WHZ
Write to output in high-Z
Write pulse width
1,2
ns
30
0
25
0
t
OHZ
Output disable to output in high-Z
2
ns
-
5
-
5
t
OW
Output active from end of write
ns
-
0
-
0
t
DH
Data hold from write time
ns
-
40
-
35
t
DW
Data to write time overlap
7
ns
-
0
-
0
t
WR
Write recovery time
6
ns
-
0
-
0
t
AS
Address setup time
ns
-
70
-
65
t
BW
LB#,UB# valid to end of write
4
ns
-
60
-
55
t
WP
5
ns
-
70
-
65
t
CW
Chip selection to end of write
ns
-
70
-
65
t
AW
Address valid to end of write
ns
-
85
-
70
t
WC
Write cycle time
Max.
Min.
Max.
Min.
Notes
Unit
R1LV1616R**-
8S
R1LV1616R**-
7S
Symbol
Parameter
相关PDF资料 |
PDF描述 |
|---|---|
| R1LV1616RSA-7SR | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-8SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-8SR | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSD-5SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSD-5SR | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV1616RSA-7SI#B0 | 制造商:Renesas Electronics Corporation 功能描述:16MB (1MX16) FAST ASYNCH, BULK - Bulk 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 16M-Bit 2M/1M x 8/16-Bit 70ns 48-Pin TSOP-I Bulk 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 16MBIT 70NS 48TSOP |
| R1LV1616RSA-7SI#S0 | 制造商:Renesas Electronics Corporation 功能描述:ADVANCED LPSRAM, 16MB,1MX16, PBFREE/T&R - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 16MBIT 70NS 48TSOP |
| R1LV1616RSA-7SI(#B0) | 制造商:Renesas Electronics Corporation 功能描述: |
| R1LV1616RSA-7SR | 制造商:Renesas Electronics Corporation 功能描述:SRAM,Low Pow,16Mb,1Mx16/2Mx8,TSOP48 |
| R1LV1616RSA-7SR#B0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 16M-Bit 2M/1M x 8/16-Bit 70ns 48-Pin TSOP-I T/R Bulk |
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