参数资料
型号: R1LV1616RSD-7SR
厂商: Renesas Technology Corp.
英文描述: 16Mb superSRAM (1M wordx16bit)
中文描述: 16Mb的superSRAM(100万wordx16bit)
文件页数: 8/16页
文件大小: 122K
代理商: R1LV1616RSD-7SR
R1LV1616R Series
Rev.1.00
2004.04.13
page 8 of 16
Read Cycle
1,2,3
ns
30
0
25
0
t
OHZ
Output disable to output in high-Z
1,2,3
ns
30
0
25
0
t
BHZ
LB#,UB# disable to high-Z
1,2,3
ns
30
0
25
0
t
CHZ2
1,2,3
ns
30
0
25
0
t
CHZ1
Chip deselect to output in high-Z
2,3
ns
-
5
-
5
t
OLZ
Output enable to output in low-Z
2,3
ns
-
5
-
5
t
BLZ
LB#,UB# enable to low-Z
2,3
ns
-
10
-
10
t
CLZ
Chip select to output in low-Z
ns
85
-
70
-
t
BA
LB#,UB# access time
ns
-
10
-
10
t
OH
Output hold from address change
ns
45
-
35
-
t
OE
Output enable to output valid
ns
85
-
70
-
t
ACS2
ns
85
-
70
-
t
ACS1
Chip select access time
ns
85
-
70
-
t
AA
Address access time
ns
-
85
-
70
t
RC
Read cycle time
Max.
Min.
Max.
Min.
Notes
Unit
R1LV1616R**-8S
R1LV1616R**-7S
Symbol
Parameter
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参数描述
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