- 您现在的位置：买卖IC网 > PDF目录380636 > R1LV1616RSD-8SR (Renesas Technology Corp.) CERAMIC RESONATOR 8.0 MHZ PDF资料下载
参数资料
| 型号： | R1LV1616RSD-8SR |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | CERAMIC RESONATOR 8.0 MHZ |
| 中文描述： | 16Mb的superSRAM（100万wordx16bit） |
| 文件页数： | 7/16页 |
| 文件大小： | 122K |
| 代理商： | R1LV1616RSD-8SR |
R1LV1616R Series
Rev.1.00
2004.04.13
page 7 of 16
Capacitance
AC Characteristics
Input pulse levels: VIL= 0.4V,VIH=2.4V
Input rise and fall time : 5ns
Input and output timing reference levels : 1.4V
Output load : See figures (Including scope and jig)
Note 1:This parameter is sampled and not 100% tested.
1
V
I/O
= 0V
pF
10
-
-
C
I/O
Input / output capacitance
1
V in = 0V
pF
10
-
-
C in
Input capacitance
Note
Test conditions
Unit
Max.
Typ.
Min.
Symbol
Parameter
(Ta = +25oC, f =1MHz)
CL=30pF
RL=500
DQ
1.4V
Test Conditions (Vcc=2.7~3.6V, Ta = 0~+70oC / -20~+85oC / -40~+85oC *)
Note: Temperature range depends on R/W/I-version. Please see table on page 2.
相关PDF资料 |
PDF描述 |
|---|---|
| R1LV1616R | 16Mb superSRAM (1M wordx16bit) |
| R1LV1616RSD-7SI | 16Mb superSRAM (1M wordx16bit) |
| R1LV1616RSD-7SR | 16Mb superSRAM (1M wordx16bit) |
| R1Q2A3609 | 36-Mbit QDR™II SRAM 2-word Burst |
| R1Q2A3609ABG-40R | 36-Mbit QDR™II SRAM 2-word Burst |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV1616RSD-8SW | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:16Mb superSRAM (1M wordx16bit) |
| R1LV3216R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit) |
| R1LV3216RSA-5S | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit) |
| R1LV3216RSA-5SI | 制造商:Renesas Electronics Corporation 功能描述:SRAM Low Power 32Mb x8/x16 3V TSOP48 |
| R1LV3216RSA-5SI#B0 | 制造商:Renesas Electronics Corporation 功能描述:LPSRAM 2M X 16 / 4M X 8 55NS - Bulk 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 32M-Bit 4M/2M x 8/16-Bit 55ns 48-Pin TSOP-I Tray |
发布紧急采购，3分钟左右您将得到回复。