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参数资料
| 型号： | R1Q2A3609ABG-60R |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 36-Mbit QDR™II SRAM 2-word Burst |
| 文件页数： | 18/25页 |
| 文件大小： | 394K |
| 代理商： | R1Q2A3609ABG-60R |
R1Q2A3636/R1Q2A3618/R1Q2A3609
TAP AC Operating Characteristics
(Ta = 0 to +70°C, V
DD
= 1.8V ±0.1V)
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
ns
Parameter
Symbol
t
THTH
t
THTL
t
TLTH
t
MVTH
t
THMX
t
CS
t
CH
t
DVTH
t
THDX
t
TLQX
t
TLQV
Min
100
40
40
10
10
10
10
10
10
0
Typ
Notes
Test clock (TCK) cycle time
TCK high pulse width
TCK low pulse width
Test mode select (TMS) setup
TMS hold
Capture setup
Capture hold
TDI valid to TCK high
TCK high to TDI invalid
TCK low to TDO unknown
TCK low to TDO valid
Notes: 1. t
CS
+ t
CH
defines the minimum pause in RAM I/O pad transitions to assure pad data capture.
TAP Controller Timing Diagram
1
1
TCK
TDI
TMS
TDO
PI
(SRAM)
tTHTL
tTHTH
tTLTH
tMVTH
tTHMX
tDVTH
tTHDX
tCS
tCH
tTLQV
tTLQX
REJ03C0294-0003 Rev.0.03 Jul. 31, 2007
Page 18 of 23
相关PDF资料 |
PDF描述 |
|---|---|
| R1Q2A3618 | 36-Mbit QDR™II SRAM 2-word Burst |
| R1Q2A3618ABG-40R | 36-Mbit QDR™II SRAM 2-word Burst |
| R1Q2A3618ABG-50R | 36-Mbit QDR™II SRAM 2-word Burst |
| R1Q2A3618ABG-60R | 36-Mbit QDR™II SRAM 2-word Burst |
| R1Q2A3636 | 36-Mbit QDR™II SRAM 2-word Burst |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1Q2A3609ABG60RB0 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3609ABG60RS0 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3609ABG60RT0 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3609B | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3609BBG-40R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
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