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参数资料
| 型号： | R1Q3A3618 |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 36-Mbit QDR™II SRAM 4-word Burst |
| 文件页数： | 5/26页 |
| 文件大小： | 407K |
| 代理商： | R1Q3A3618 |
R1Q3A3636/R1Q3A3618/R1Q3A3609
Name
V
SS
V
REF
I/O type
Supply
Descriptions
Notes
Power supply: Ground.
HSTL input reference voltage: Nominally V
DDQ
/2, but may be adjusted to improve
system noise margin. Provides a reference voltage for the HSTL input buffers.
No connect: These signals are not internally connected. These signals can be left
floating or connected to ground to improve package heat dissipation.
Notes: 1. All power supply and ground balls must be connected for proper operation of the device.
NC
Block Diagram
(R1Q3A3636 / R1Q3A3618 / R1Q3A3609 series)
Address
Registry
and
Logic
Data
Registry
and
Logic
Memory
Array
W
R
Address
/R
/W
K
(/K)
/W
/BWx
D
(Data in)
/R
K
/K
72
/36
/18
O
R
144
/72
/36
O
S
O
B
18/19/20
36/18/9
36/18/9
Q
(Data out)
W
S
18/19/20
K
C
C,/C
or
K,/K
ZQ
2
CQ
/CQ
72
/36
/18
M
M
72
/36
/18
72
/36
/18
4/2/1
REJ03C0295-0003 Rev.0.03 Jul. 31, 2007
Page 5 of 24
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PDF描述 |
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| R1Q3A3618ABG-30R | 36-Mbit QDR™II SRAM 4-word Burst |
| R1Q3A3618ABG-33R | 36-Mbit QDR™II SRAM 4-word Burst |
| R1Q3A3618ABG-40R | 36-Mbit QDR™II SRAM 4-word Burst |
| R1Q3A3618ABG-50R | 36-Mbit QDR™II SRAM 4-word Burst |
| R1Q3A3618ABG-60R | 36-Mbit QDR™II SRAM 4-word Burst |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1Q3A3618ABG-30R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR™II SRAM 4-word Burst |
| R1Q3A3618ABG-33R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR™II SRAM 4-word Burst |
| R1Q3A3618ABG-40R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR™II SRAM 4-word Burst |
| R1Q3A3618ABG40RB0 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q3A3618ABG40RS0 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
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