参数资料
型号: R1RP0404DGE-2PR
厂商: Renesas Technology Corp.
英文描述: 4M High Speed SRAM (1-Mword 】 4-bit)
中文描述: 4分高速SRAM(1 - Mword】4位)
文件页数: 5/13页
文件大小: 88K
代理商: R1RP0404DGE-2PR
R1RP0404D Series
Rev.1.00, Mar.12.2004, page 5 of 11
DC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5.0 V
±
10%, V
SS
= 0 V)
Parameter
Symbol
Min
Max
Unit
Test conditions
Input leakage current
II
LI
I
II
LO
I
I
CC
2
μ
A
μ
A
mA
V
IN
= V
SS
to V
CC
V
IN
= V
SS
to V
CC
Min cycle
CS# = V
, l
= 0 mA
Other inputs = V
IH
/V
IL
Min cycle, CS# = V
IH
,
Other inputs = V
IH
/V
IL
f = 0 MHz
V
CS#
V
0.2 V,
(1) 0 V
V
IN
0.2 V or
(2) V
CC
V
IN
V
CC
0.2 V
Output leakage current
2
Operation power supply current
130
Standby power supply current
I
SB
40
mA
I
SB1
5
mA
*
2.4
1
1.0
*
1
Output voltage
V
OL
V
OH
0.4
V
I
OL
= 8 mA
I
OH
=
4 mA
Note: 1. This characteristics is guaranteed only for L-version.
V
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Parameter
Symbol
Min
Max
Unit
Test conditions
Input capacitance
*
1
C
IN
C
I/O
6
pF
V
IN
= 0 V
V
I/O
= 0 V
Input/output capacitance
*
Note: 1. This parameter is sampled and not 100% tested.
1
8
pF
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