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参数资料
| 型号： | R1RP0416D |
| 厂商： | Renesas Technology Corp. |
| 元件分类： | SRAM |
| 英文描述： | 4M High Speed SRAM (256-kword X 16-bit) |
| 中文描述： | 4分高速SRAM（256 - KWord的x 16位） |
| 文件页数： | 11/15页 |
| 文件大小： | 100K |
| 代理商： | R1RP0416D |
R1RP0416D Series
Rev.1.00, Mar.12.2004, page 5 of 13
DC Characteristics
(Ta = 0 to +70
°C, V
CC = 5.0 V ± 10%, VSS = 0 V)
Parameter
Symbol
Min
Max
Unit
Test conditions
Input leakage current
|I
LI|
2
A
V
IN = VSS to VCC
Output leakage current
|I
LO|
2
A
V
IN = VSS to VCC
Operation power supply current
I
CC
160
mA
Min cycle
CS# = V
IL, lOUT = 0 mA
Other inputs = V
IH/VIL
Standby power supply current
I
SB
40
mA
Min cycle, CS# = V
IH,
Other inputs = V
IH/VIL
I
SB1
5
mA
f = 0 MHz
V
CC ≥ CS# ≥ VCC 0.2 V,
(1) 0 V
≤ V
IN ≤ 0.2 V or
(2) V
CC ≥ VIN ≥ VCC 0.2 V
*1
1.0*
1
Output voltage
V
OL
0.4
V
I
OL = 8 mA
V
OH
2.4
V
I
OH = 4 mA
Note:
1. This characteristics is guaranteed only for L-version.
Capacitance
(Ta = +25
°C, f = 1.0 MHz)
Parameter
Symbol
Min
Max
Unit
Test conditions
Input capacitance*
1
C
IN
6
pF
V
IN = 0 V
Input/output capacitance*
1
C
I/O
8
pF
V
I/O = 0 V
Note:
1. This parameter is sampled and not 100% tested.
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相关代理商/技术参数 |
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| R1RP0416DGE-2LR | 制造商:Renesas Electronics Corporation 功能描述:R1RP0416DGE-2LR |
| R1RP0416DGE-2LR#B0 | 制造商:Renesas Electronics 功能描述:SRAM Chip Async Single 5V 4M-Bit 256K x 16 12ns 44-Pin SOJ Tube Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 5V 4M-Bit 256K x 16 12ns 44-Pin SOJ Tube |
| R1RP0416DGE-2PI#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 5V 4M-Bit 256K x 16 12ns 44-Pin SOJ Tube |
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