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参数资料
| 型号： | R1RW0404D |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 4M HIGH SPEED SRAM (1-MWORD X 4-BIT) |
| 中文描述： | 4分高速SRAM（1 - MWORD × 4位） |
| 文件页数： | 7/13页 |
| 文件大小： | 88K |
| 代理商： | R1RW0404D |
R1RW0404D Series
Rev.1.00, Mar.12.2004, page 7 of 11
Write Cycle
R1RW0404D
-2
Parameter
Symbol
Min
Max
Unit
Notes
Write cycle time
t
WC
t
AW
t
CW
t
WP
t
AS
t
WR
t
DW
t
DH
t
OW
t
OHZ
t
WHZ
12
6
ns
Address valid to end of write
8
ns
Chip select to end of write
8
ns
9
Write pulse width
8
ns
8
Address setup time
0
ns
6
Write recovery time
0
ns
7
Data to write time overlap
6
ns
Data hold from write time
0
ns
Write disable to output in low-Z
3
ns
1
Output disable to output in high-Z
ns
1
Write enable to output in high-Z
Notes: 1. Transition is measured
±
200 mV from steady voltage with output load (B). This parameter is
sampled and not 100% tested.
2. Address should be valid prior to or coincident with CS# transition low.
3. WE# and/or CS# must be high during address transition time.
4. If CS# and OE# are low during this period, I/O pins are in the output state. Then, the data input
signals of opposite phase to the outputs must not be applied to them.
5. If the CS# low transition occurs simultaneously with the WE# low transition or after the WE#
transition, output remains a high impedance state.
6. t
AS
is measured from the latest address transition to the later of CS# or WE# going low.
7. t
WR
is measured from the earlier of CS# or WE# going high to the first address transition.
8. A write occurs during the overlap of a low CS# and a low WE#. A write begins at the latest
transition among CS# going low and WE# going low. A write ends at the earliest transition
among CS# going high and WE# going high. t
WP
is measured from the beginning of write to the
end of write.
9. t
CW
is measured from the later of CS# going low to the end of write.
6
ns
1
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| R1RW0404DGE-2LR | 4M HIGH SPEED SRAM (1-MWORD X 4-BIT) |
| R1RW0404DGE-2PR | 4M HIGH SPEED SRAM (1-MWORD X 4-BIT) |
| R1RW0408D | 4M High Speed SRAM (512-kword x 8-bit) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R1RW0404DGE-2LR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:4M HIGH SPEED SRAM (1-MWORD X 4-BIT) |
| R1RW0404DGE-2LR#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 1M x 4-Bit 12ns 32-Pin SOJ Tube |
| R1RW0404DGE-2PR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:4M HIGH SPEED SRAM (1-MWORD X 4-BIT) |
| R1RW0404DGE-2PR#B0 | 制造商:Renesas Electronics Corporation 功能描述:Bulk |
| R1RW0408D | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:4M High Speed SRAM (512-kword x 8-bit) |
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