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参数资料
| 型号： | R1RW0408D |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 4M High Speed SRAM (512-kword x 8-bit) |
| 中文描述： | 4分高速SRAM（512 - KWord的× 8位） |
| 文件页数： | 12/14页 |
| 文件大小： | 86K |
| 代理商： | R1RW0408D |
R1RW0408D Series
Rev.1.00, Mar.12.2004, page 12 of 12
Low V
CC
Data Retention Characteristics
(Ta = 0 to +70
°
C)
This characteristics is guaranteed only for L-version.
Parameter
Symbol
Min
Max
Unit
Test conditions
V
CC
for data retention
V
DR
2.0
V
V
≥
CS#
≥
V
CC
0.2 V
(1) 0 V
≤
V
IN
≤
0.2 V or
(2) V
CC
≥
V
IN
≥
V
CC
0.2 V
V
= 3 V, V
CC
≥
CS#
≥
V
CC
0.2 V
(1) 0 V
≤
V
IN
≤
0.2 V or
(2) V
CC
≥
V
IN
≥
V
CC
0.2 V
See retention waveform
Data retention current
I
CCDR
400
μ
A
Chip deselect to data
retention time
t
CDR
0
ns
Operation recovery time
t
R
5
ms
Low V
CC
Data Retention Timing Waveform
CC
V
3.0 V
0 V
CS#
t
CDR
t
R
V
CC
≥
CS#
≥
V
CC
0.2 V
2.0 V
DR
V
Data retention mode
相关PDF资料 |
PDF描述 |
|---|---|
| R1RW0408DGE-2LR | 4M High Speed SRAM (512-kword x 8-bit) |
| R1RW0408DGE-2PR | 4M High Speed SRAM (512-kword x 8-bit) |
| R1RW0416D | 4M High Speed SRAM (256-kword x 16-bit) |
| R1RW0416DGE-2LR | 4M High Speed SRAM (256-kword x 16-bit) |
| R1RW0416DGE-2PR | 4M High Speed SRAM (256-kword x 16-bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1RW0408DGE-0PR#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 10ns 36-Pin SOJ Tube |
| R1RW0408DGE-2LR | 制造商:Renesas Electronics Corporation 功能描述:R1RW0408DGE-2LR |
| R1RW0408DGE-2LR#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 12ns 36-Pin SOJ Tube |
| R1RW0408DGE-2PI | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit) |
| R1RW0408DGE-2PI#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 12ns 36-Pin SOJ Tube |
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