参数资料
型号: R1RW0416DSB-2LR
厂商: Renesas Technology Corp.
元件分类: DRAM
英文描述: 4M High Speed SRAM (256-kword x 16-bit)
中文描述: 4分高速SRAM(256 - KWord的x 16位)
文件页数: 1/16页
文件大小: 100K
代理商: R1RW0416DSB-2LR
Rev.1.00, Mar.12.2004, page 1 of 14
R1RW0416D Series
4M High Speed SRAM (256-kword
×
16-bit)
REJ03C0107-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword
×
16-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416D
is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.
Features
Single 3.3 V supply: 3.3 V
±
0.3 V
Access time: 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 130 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current : 5 mA (max)
Data retention current: 0.4 mA (max) (L-version)
Data retention voltage: 2.0 V (min) (L-version)
Center V
CC
and V
SS
type pin out
: 0.8 mA (max) (L-version)
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相关代理商/技术参数
参数描述
R1RW0416DSB-2LR#D0 制造商:Renesas Electronics 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin TSOP-II Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin TSOP-II Tray
R1RW0416DSB-2PI 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)
R1RW0416DSB-2PI#D0 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin TSOP-II T/R
R1RW0416DSB-2PID0 制造商:Renesas Electronics Corporation 功能描述:Synchronous SRAM,Fast,4M,x16,12ns,TSOP44
R1RW0416DSB-2PR 制造商:Renesas Electronics Corporation 功能描述:IC,memory,SRAM,4Mb,high speed,