参数资料
型号: R1WV3216RSD-8SW
厂商: Renesas Technology Corp.
英文描述: 32Mb superSRAM (2M wordx16bit)
中文描述: 32兆superSRAM(200万wordx16bit)
文件页数: 8/16页
文件大小: 124K
代理商: R1WV3216RSD-8SW
R1W V3216R Series
Rev.1.00
2004.4.13
page 8 of 16
Read Cycle
1,2,3
ns
30
0
25
0
t
OHZ
Output disable to output in high-Z
1,2,3
ns
30
0
25
0
t
BHZ
LB#,UB# disable to high-Z
1,2,3
ns
30
0
25
0
t
CHZ2
1,2,3
ns
30
0
25
0
t
CHZ1
Chip deselect to output in high-Z
2,3
ns
-
5
-
5
t
OLZ
Output enable to output in low-Z
2,3
ns
-
5
-
5
t
BLZ
LB#,UB# enable to low-Z
2,3
ns
-
10
-
10
t
CLZ
Chip select to output in low-Z
ns
85
-
70
-
t
BA
LB#,UB# access time
ns
-
10
-
10
t
OH
Output hold from address change
ns
45
-
35
-
t
OE
Output enable to output valid
ns
85
-
70
-
t
ACS2
ns
85
-
70
-
t
ACS1
Chip select access time
ns
85
-
70
-
t
AA
Address access time
ns
-
85
-
70
t
RC
Read cycle time
Max.
Min.
Max.
Min.
Notes
Unit
R1WV3216R**-8S
R1WV3216R**-7S
Symbol
Parameter
相关PDF资料
PDF描述
R200CHX DISTRIBUTED GATE THYRISTORS
R210CHX DISTRIBUTED GATE THYRISTORS
R216CHX DISTRIBUTED GATE THYRISTORS
R219CHX DISTRIBUTED GATE THYRISTORS
R220CHX DISTRIBUTED GATE THYRISTORS
相关代理商/技术参数
参数描述
R1WV6416R 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
R1WV6416RBG-5SI 制造商:Renesas Electronics Corporation 功能描述:SRAM 64MBIT 3V 55NS 48FBGA 制造商:Renesas Electronics Corporation 功能描述:SRAM, 64MBIT, 3V, 55NS, 48FBGA; Memory Size:64Mbit; Memory Configuration:4M x 16bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:48; Access Time:55ns; Operating Temperature Min:-40C; ;RoHS Compliant: Yes
R1WV6416RBG-5SI#B0 制造商:Renesas Electronics Corporation 功能描述:LPSRAM 4M X 16 55NS - Bulk 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 64M-Bit 8M/4M x 8/16-Bit 55ns 48-Pin FBGA Tray
R1WV6416RBG-5SI#S0 制造商:Renesas Electronics Corporation 功能描述:LPSRAM 4M X 16 55NS - Tape and Reel
R1WV6416RBG-5SIB0 制造商:Renesas Electronics Corporation 功能描述:SRAM, 64Mbit, 4Mx16, 3V, 55ns