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| 型号： | R5F21174DSP |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO20 |
| 封装： | 4.40 X 6.50 MM, 0.65 MM PITCH, PLASTIC, LSSOP-20 |
| 文件页数： | 14/38页 |
| 文件大小： | 671K |
| 代理商： | R5F21174DSP |
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R8C/16 Group, R8C/17 Group
5. Electrical Characteristics
Rev.2.00
Jan 30, 2006
Page 21 of 35
REJ03B0101-0200
NOTES:
1.
VCC = AVcc = 2.7 to 5.5V at Topr = 0 to 60
°C, unless otherwise specified.
2.
Definition of program and erase
The program and erase endurance shows an erase endurance for every block.
If the program and erase endurance is “n” times (n = 100, 10000), “n” times erase can be performed for every block.
For example, if performing 1-byte write to the distinct addresses on Block A of 1Kbyte block 1,024 times and then erasing that
block, program and erase endurance is counted as one time.
However, do not perform multiple programs to the same address for one time ease.(disable overwriting).
3.
Endurance to guarantee all electrical characteristics after program and erase.(1 to “Min.” value can be guaranateed).
4.
In the case of a system to execute multiple programs, perform one erase after programming as reducing effective reprogram
endurance not to leave blank area as possible such as programming write addresses in turn. If programming a set of 16
bytes, programming up to 128 sets and then erasing them one time can reduce effective reprogram endurance. Additionally,
averaging erase endurance for Block A and B can reduce effective reprogram endurance more. To leave erase endurance for
every block as information and determine the restricted endurance are recommended.
5.
If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at
least three times until the erase error does not occur.
6.
Customers desiring Program/Erase failure rate information should contact their Renesas technical support representative.
7.
The data hold time incudes time that the power supply is off or the clock is not supplied.
Table 5.4
Flash Memory (Program ROM) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Program/Erase Endurance(2)
R8C/16 Group
times
R8C/17 Group
1,000(3)
times
Byte Program Time
VCC = 5.0 V at Topr = 25
°C
50
400
s
Block Erase Time
VCC = 5.0 V at Topr = 25
°C
0.4
9
s
td(SR-ES)
Time Delay from Suspend Request until
Erase Suspend
8ms
Erase Suspend Request Interval
10
ms
Program, Erase Voltage
2.7
5.5
V
Read Voltage
2.7
5.5
V
Program, Erase Temperature
0
60
°C
Data Hold Time(7)
Ambient temperature = 55
°C20
year
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PDF描述 |
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| R5F21173DSP | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO20 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R5F21174DSP#U0 | 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 16KB FLASH 3.3V/5V 20PIN LSSOP - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 16KB FLASH 20SSOP |
| R5F21174DSP#V0 | 功能描述:IC R8C MCU FLASH 20LSSOP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/1x/17 标准包装:250 系列:56F8xxx 核心处理器:56800E 芯体尺寸:16-位 速度:60MHz 连通性:CAN，SCI，SPI 外围设备:POR，PWM，温度传感器，WDT 输入/输出数:21 程序存储器容量:40KB（20K x 16） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:6K x 16 电压 - 电源 (Vcc/Vdd):2.25 V ~ 3.6 V 数据转换器:A/D 6x12b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:48-LQFP 包装:托盘 配用:MC56F8323EVME-ND - BOARD EVALUATION MC56F8323 |
| R5F21174SP | 制造商:Renesas Electronics Corporation 功能描述:R5F21174SP |
| R5F21174SP#U0 | 制造商:Renesas Electronics Corporation 功能描述:MCU 16-bit R8C CISC 16KB Flash 3.3V/5V 20-Pin LSSOP Tube 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 16KB FLASH 3.3V/5V 20PIN LSSOP - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:R5F21174SP |
| R5F21174SP#V0 | 功能描述:IC R8C MCU FLASH 16K 20SSOP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/1x/17 标准包装:250 系列:80C 核心处理器:8051 芯体尺寸:8-位 速度:16MHz 连通性:EBI/EMI，I²C，UART/USART 外围设备:POR，PWM，WDT 输入/输出数:40 程序存储器容量:- 程序存储器类型:ROMless EEPROM 大小:- RAM 容量:256 x 8 电压 - 电源 (Vcc/Vdd):4.5 V ~ 5.5 V 数据转换器:A/D 8x10b 振荡器型:内部 工作温度:-40°C ~ 85°C 封装/外壳:68-LCC（J 形引线） 包装:带卷 (TR) |
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