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参数资料
| 型号： | R5F21182DSP |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO20 |
| 封装： | 4.40 X 6.50 MM, 0.65 MM PITCH, PLASTIC, LSSOP-20 |
| 文件页数： | 18/41页 |
| 文件大小： | 725K |
| 代理商： | R5F21182DSP |
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R8C/18 Group, R8C/19 Group
5. Electrical Characteristics
Rev.1.40
Apr 14, 2006
Page 25 of 38
REJ03B0124-0140
NOTES:
1.
VCC = 2.7 to 5.5 V at Topr = -20 to 85
°C / -40 to 85 °C, unless otherwise specified.
2.
Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one. However, the same address must not be programmed more than once per erase operation (overwriting
prohibited).
3.
Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4.
If emergency processing is required, a suspend request can be generated independent of this characteristic. In that case the
normal time delay to suspend can be applied to the request. However, we recommend that a suspend request with an interval
of less than 650
s is only used once because, if the suspend state continues, erasure cannot operate and the incidence of
erasure error rises.
5.
In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
6.
If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
7.
Customers desiring programming/erasure failure rate information should contact their Renesas technical support
representative.
8.
-40
°C for D version.
9.
The data hold time includes time that the power supply is off or the clock is not supplied.
Figure 5.2
Transition Time to Suspend
Table 5.5
Flash Memory (Data flash Block A, Block B) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Program/erase endurance(2)
times
Byte program time
(Program/erase endurance
≤ 1,000 times)
50
400
s
Byte program time
(Program/erase endurance
> 1,000 times)
65
s
Block erase time
(Program/erase endurance
≤ 1,000 times)
0.2
9
s
Block erase time
(Program/erase endurance
> 1,000 times)
0.3
s
td(SR-SUS)
Time delay from suspend request until
suspend
97+CPU clock
× 6 cycles
s
Interval from erase start/restart until
following suspend request
650
s
Interval from program start/restart until
following suspend request
0
ns
Time from suspend until program/erase
restart
3+CPU clock
× 4 cycles
s
Program, erase voltage
2.7
5.5
V
Read voltage
2.7
5.5
V
Program, erase temperature
-20(8)
85
°C
Data hold time(9)
Ambient temperature = 55
°C20
year
FMR46
Suspend request
(Maskable interrupt request)
Fixed time (97
s)
td(SR-SUS)
Clock-dependent
time
Access restart
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R5F21182DSP#U0 | 制造商:Renesas Electronics Corporation 功能描述:MCU 16-bit R8C CISC 8KB Flash 3.3V/5V 20-Pin LSSOP Tube 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT M16C CISC 8KB FLASH 3.3V/5V 20PIN LSSOP - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 8KB FLASH 20SSOP |
| R5F21182DSP#V0 | 功能描述:IC R8C MCU FLASH 20LSSOP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/1x/18 其它有关文件:STM32F101T8 View All Specifications 特色产品:STM32 32-bit Cortex MCUs 标准包装:490 系列:STM32 F1 核心处理器:ARM? Cortex?-M3 芯体尺寸:32-位 速度:36MHz 连通性:I²C，IrDA，LIN，SPI，UART/USART 外围设备:DMA，PDR，POR，PVD，PWM，温度传感器，WDT 输入/输出数:26 程序存储器容量:64KB（64K x 8） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:10K x 8 电压 - 电源 (Vcc/Vdd):2 V ~ 3.6 V 数据转换器:A/D 10x12b 振荡器型:内部 工作温度:-40°C ~ 85°C 封装/外壳:36-VFQFN，36-VFQFPN 包装:托盘 配用:497-10030-ND - STARTER KIT FOR STM32497-8853-ND - BOARD DEMO STM32 UNIV USB-UUSCIKSDKSTM32-PL-ND - KIT IAR KICKSTART STM32 CORTEXM3497-8512-ND - KIT STARTER FOR STM32F10XE MCU497-8505-ND - KIT STARTER FOR STM32F10XE MCU497-8304-ND - KIT STM32 MOTOR DRIVER BLDC497-6438-ND - BOARD EVALUTION FOR STM32 512K497-6289-ND - KIT PERFORMANCE STICK FOR STM32MCBSTM32UME-ND - BOARD EVAL MCBSTM32 + ULINK-MEMCBSTM32U-ND - BOARD EVAL MCBSTM32 + ULINK2更多... 其它名称:497-9032STM32F101T8U6-ND |
| R5F21182NP | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:RENESAS 16-BIT SINGLE-CHIP MCU R8C FAMILY / R8C/1x SERIES |
| R5F21182NP#U0 | 功能描述:IC R8C MCU FLASH 8K 28HWQFN RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/1x/18 产品培训模块:MCU Product Line Introduction AVR® UC3 Introduction 标准包装:2,500 系列:AVR®32 UC3 B 核心处理器:AVR 芯体尺寸:32-位 速度:60MHz 连通性:I²C，IrDA，SPI，SSC，UART/USART，USB 外围设备:欠压检测/复位，DMA，POR，PWM，WDT 输入/输出数:28 程序存储器容量:128KB（128K x 8） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:32K x 8 电压 - 电源 (Vcc/Vdd):1.65 V ~ 1.95 V 数据转换器:A/D 6x10b 振荡器型:内部 工作温度:-40°C ~ 85°C 封装/外壳:48-TQFP 包装:带卷 (TR) 配用:ATSTK600-TQFP48-ND - STK600 SOCKET/ADAPTER 48-TQFPATAVRONEKIT-ND - KIT AVR/AVR32 DEBUGGER/PROGRMMRATEVK1101-ND - KIT DEV/EVAL FOR AVR32 AT32UC3B 其它名称:AT32UC3B1128-AUR-NDAT32UC3B1128-AURTR |
| R5F21182SP | 制造商:Renesas Electronics 功能描述:16 R8C/1x 20MHz 20LSSOP 8KB Tube |
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