参数资料
型号: R5F211B3NP
元件分类: 微控制器/微处理器
英文描述: 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQCC28
封装: 5 X 5 MM, 0.50 MM PITCH, PLASTIC, WQFN-28
文件页数: 25/51页
文件大小: 438K
代理商: R5F211B3NP
R8C/1A Group, R8C/1B Group
5. Electrical Characteristics
Rev.1.40
Dec 08, 2006
Page 29 of 45
REJ03B0144-0140
NOTES:
1.
This condition is not applicable when using with Vcc
≥ 1.0 V.
2.
When turning power on after the time to hold the external power below effective voltage (Vpor1) exceeds10 s, refer to Table
3.
tw(por2) is the time to hold the external power below effective voltage (Vpor2).
NOTES:
1.
When not using voltage monitor 1, use with Vcc
≥ 2.7 V.
2.
tw(por1) is the time to hold the external power below effective voltage (Vpor1).
Figure 5.3
Reset Circuit Electrical Characteristics
Table 5.8
Reset Circuit Electrical Characteristics (When Using Voltage Monitor 1 Reset)
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
Vpor2
Power-on reset valid voltage
-20
°C ≤ Topr ≤ 85°C
Vdet1
V
tw(Vpor2-Vdet1) Supply voltage rising time when power-on reset is
-20
°C ≤ Topr ≤ 85°C,
tw(por2)
≥ 0s(3)
100
ms
Table 5.9
Reset Circuit Electrical Characteristics (When Not Using Voltage Monitor 1 Reset)
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
Vpor1
Power-on reset valid voltage
-20
°C ≤ Topr ≤ 85°C
0.1
V
tw(Vpor1-Vdet1)
Supply voltage rising time when power-on reset is
deasserted
0
°C ≤ Topr ≤ 85°C,
tw(por1)
≥ 10 s(2)
100
ms
tw(Vpor1-Vdet1)
Supply voltage rising time when power-on reset is
deasserted
-20
°C ≤ Topr < 0°C,
tw(por1)
≥ 30 s(2)
100
ms
tw(Vpor1-Vdet1)
Supply voltage rising time when power-on reset is
deasserted
-20
°C ≤ Topr < 0°C,
tw(por1)
≥ 10 s(2)
1ms
tw(Vpor1-Vdet1)
Supply voltage rising time when power-on reset is
deasserted
0
°C ≤ Topr ≤ 85°C,
tw(por1)
≥ 1 s(2)
0.5
ms
NOTES:
1. Hold the voltage inside the MCU operation voltage range (Vccmin or above) within the sampling time.
2. The sampling clock can be selected. Refer to 7. Voltage Detection Circuit for details.
3. Vdet1 indicates the voltage detection level of the voltage detection 1 circuit. Refer to 7. Voltage Detection Circuit for details.
Vdet1(3)
Vpor1
Internal reset signal
(“L” valid)
tw(por1)
tw(Vpor1–Vdet1)
Sampling time(1, 2)
Vdet1(3)
1
fRING-S
× 32
1
fRING-S
× 32
Vpor2
Vccmin
tw(por2) tw(Vpor2–Vdet1)
相关PDF资料
PDF描述
R5F211A4XXXNP 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQCC28
R5F211B4DD 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDIP20
R5F211B3XXXNP 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQCC28
R5F211B4XXXNP 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQCC28
R5F211A1DD 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDIP20
相关代理商/技术参数
参数描述
R5F211B3NP#U0 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 12KB FLASH 3.3V/5V 28PIN HWQFN - Trays 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 12KB FLASH 28QFN
R5F211B3NP#V0 功能描述:IC R8C MCU FLASH 12K 28HWQFN RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器, 系列:R8C/1x/1B 标准包装:250 系列:80C 核心处理器:8051 芯体尺寸:8-位 速度:16MHz 连通性:EBI/EMI,I²C,UART/USART 外围设备:POR,PWM,WDT 输入/输出数:40 程序存储器容量:- 程序存储器类型:ROMless EEPROM 大小:- RAM 容量:256 x 8 电压 - 电源 (Vcc/Vdd):4.5 V ~ 5.5 V 数据转换器:A/D 8x10b 振荡器型:内部 工作温度:-40°C ~ 85°C 封装/外壳:68-LCC(J 形引线) 包装:带卷 (TR)
R5F211B3SP 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER R8C FAMILY / R8C/1x SERIES
R5F211B3SP#U0 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 12KB FLASH 3.3V/5V 20PIN LSSOP - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MCU 16-bit R8C R8C CISC 12KB Flash 3.3V/5V 20-Pin LSSOP Tube 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 12KB FLASH 20SSOP 制造商:Renesas Electronics Corporation 功能描述:R8C/1B Series 3/5 V 12 KB Rom 1 kB Ram Microcontroller - SSOP-20
R5F211B3SP#UO 制造商:Renesas Electronics Corporation 功能描述:FD