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| 型号： | R5F21354ADFP |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | FLASH, 20 MHz, MICROCONTROLLER, PQFP52 |
| 封装： | 10 X 10 MM, 0.65 MM PITCH, PLASTIC, LQFP-52 |
| 文件页数： | 26/57页 |
| 文件大小： | 472K |
| 代理商： | R5F21354ADFP |
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R8C/35A Group
5. Electrical Characteristics
REJ03B0225-0100 Rev.1.00
Sep 10, 2009
Page 32 of 54
Notes:
1.
VCC = 2.7 to 5.5 V at Topr = 0 to 60
°C, unless otherwise specified.
2.
Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 1,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3.
Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4.
In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
5.
If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6.
Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7.
The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.7
Flash Memory (Program ROM) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Program/erase endurance (2)
1,000 (3)
times
Byte program time
80
s
Block erase time
0.3
s
td(SR-SUS)
Time delay from suspend request until
suspend
5+CPU clock
× 3 cycles
ms
Interval from erase start/restart until
following suspend request
33
ms
Suspend interval necessary for auto-
erasure to complete
33
ms
Time from suspend until erase restart
30+CPU clock
× 1 cycle
s
Program, erase voltage
2.7
5.5
V
Read voltage
1.8
5.5
V
Program, erase temperature
0
60
°C
Data hold time (7)
Ambient temperature = 55
°C20
year
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R5F21354ANFP | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MCU M16C FAMILY / R8C/Tiny SERIES |
| R5F21354CDFP | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:RENESAS MCU |
| R5F21354CDFP#U0 | 制造商:Renesas Electronics Corporation 功能描述:MCU 16-Bit R8C CISC 16KB Flash 3.3V/5V 52-Pin LQFP Tube 制造商:Renesas Electronics Corporation 功能描述:R8C35C 16+4KB 1.8/5.5V -40 85C 52LQFP - Trays |
| R5F21354CDFP#V0 | 功能描述:MCU 16KB ROM 1.5KB RAM 52-LQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/3x/35C 标准包装:250 系列:80C 核心处理器:8051 芯体尺寸:8-位 速度:16MHz 连通性:EBI/EMI，I²C，UART/USART 外围设备:POR，PWM，WDT 输入/输出数:40 程序存储器容量:- 程序存储器类型:ROMless EEPROM 大小:- RAM 容量:256 x 8 电压 - 电源 (Vcc/Vdd):4.5 V ~ 5.5 V 数据转换器:A/D 8x10b 振荡器型:内部 工作温度:-40°C ~ 85°C 封装/外壳:68-LCC（J 形引线） 包装:带卷 (TR) |
| R5F21354CDFP#V2 | 制造商:Renesas Electronics Corporation 功能描述:R8C/35C 16K+4K/1.5K 52LQFP 10X10 -40-+85 - Trays |
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