- 您现在的位置：买卖IC网 > PDF目录69313 > R5F363AKDFB 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100 PDF资料下载
参数资料
| 型号： | R5F363AKDFB |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100 |
| 封装： | 14 X 14 MM, 0.50 MM PITCH, PLASTIC, LQFP-100 |
| 文件页数： | 73/119页 |
| 文件大小： | 907K |
| 代理商： | R5F363AKDFB |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页当前第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页第107页第108页第109页第110页第111页第112页第113页第114页第115页第116页第117页第118页第119页
R01DS0033EJ0200 Rev.2.00
Page 57 of 115
Feb 07, 2011
M16C/63 Group
5. Electrical Characteristics
Notes:
1.
Definition of program and erase cycles
The program and erase cycles refer to the number of per-block erasures.
If the program and erase cycles are n (n = 10,000), each block can be erased n times.
For example, if a 4 KB block is erased after writing 2 word data 1,024 times, each to a different address, this
counts as one program and erase cycles. Data cannot be written to the same address more than once without
erasing the block (rewrite prohibited).
2.
Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
3.
In a system that executes multiple programming operations, the actual erasure count can be reduced by writing
to sequential addresses in turn so that as much of the block as possible is used up before performing an erase
operation. For example, when programming groups of 16 bytes, the effective number of rewrites can be
minimized by programming up to 256 groups before erasing them all in one operation. In addition, averaging the
erasure cycles between blocks A and B can further reduce the actual erasure cycles. It is also advisable to retain
data on the erasure cycles of each block and limit the number of erase operations to a certain number.
4.
If an error occurs during block erase, attempt to execute the clear status register command, then execute the
block erase command at least three times until the erase error does not occur.
5.
Customers desiring program/erase failure rate information should contact a Renesas Electronics sales office.
6.
The data hold time includes time that the power supply is off or the clock is not supplied.
7.
After an erase start or erase restart, if an interval of at least 20 ms is not set before the next suspend request, the
erase sequence cannot be completed.
Table 5.11
Flash Memory (Data Flash) Electrical Characteristics
VCC1 = 2.7 to 5.5 V at Topr = -20 to 85°C/-40 to 85°C, unless otherwise specified.
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
-
10,000 (2)
times
-
2 word program time
VCC1 = 3.3 V, Topr = 25°C
300
4000
μs
-
Lock bit program time
VCC1 = 3.3 V, Topr = 25°C
140
3000
μs
-
Block erase time
VCC1 = 3.3 V, Topr = 25°C
0.2
3.0
s
td(SR-SUS)
Time delay from suspend request
until suspend
ms
-
Interval from erase start/restart until
following suspend request
0
μs
-
Suspend interval necessary for
auto-erasure to complete (7)
20
ms
-
Time from suspend until erase
restart
μs
-
Program, erase voltage
2.7
5.5
V
-
Read voltage
2.7
5.5
V
-
Program, erase temperature
20/40
85
°C
tPS
Flash memory circuit stabilization wait time
50
μs
-
Data hold time (6)
Ambient temperature = 55
°C
20
year
5
3
f BCLK
()
----------------
+
30
1
f BCLK
()
----------------
+
相关PDF资料 |
PDF描述 |
|---|---|
| R5F363AKNFA | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100 |
| R5F363AKDFB | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100 |
| R5F363AMNLG | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PBGA100 |
| R5F363B6NFE | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP80 |
| R5F363AMDFA | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R5F363AKDFB#30 | 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 384KB FLASH 100QFP |
| R5F363AKDFB#U0 | 功能描述:MCU 4KB FLASH 384/16K 100-LQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:M16C™ M16C/60/63 产品培训模块:CAN Basics Part-1 CAN Basics Part-2 Electromagnetic Noise Reduction Techniques Part 1 M16C Product Overview Part 1 M16C Product Overview Part 2 标准包装:1 系列:M16C™ M32C/80/87 核心处理器:M32C/80 芯体尺寸:16/32-位 速度:32MHz 连通性:EBI/EMI，I²C，IEBus，IrDA，SIO，UART/USART 外围设备:DMA，POR，PWM，WDT 输入/输出数:121 程序存储器容量:384KB（384K x 8） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:24K x 8 电压 - 电源 (Vcc/Vdd):3 V ~ 5.5 V 数据转换器:A/D 34x10b，D/A 2x8b 振荡器型:内部 工作温度:-20°C ~ 85°C 封装/外壳:144-LQFP 包装:托盘 产品目录页面:749 (CN2011-ZH PDF) 配用:R0K330879S001BE-ND - KIT DEV RSK M32C/87 |
| R5F363AKNFA | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:RENESAS MCU |
| R5F363AKNFA#U0 | 功能描述:MCU 4KB FLASH 384/16K 100-QFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:M16C™ M16C/60/63 产品培训模块:CAN Basics Part-1 CAN Basics Part-2 Electromagnetic Noise Reduction Techniques Part 1 M16C Product Overview Part 1 M16C Product Overview Part 2 标准包装:1 系列:M16C™ M32C/80/87 核心处理器:M32C/80 芯体尺寸:16/32-位 速度:32MHz 连通性:EBI/EMI，I²C，IEBus，IrDA，SIO，UART/USART 外围设备:DMA，POR，PWM，WDT 输入/输出数:121 程序存储器容量:384KB（384K x 8） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:24K x 8 电压 - 电源 (Vcc/Vdd):3 V ~ 5.5 V 数据转换器:A/D 34x10b，D/A 2x8b 振荡器型:内部 工作温度:-20°C ~ 85°C 封装/外壳:144-LQFP 包装:托盘 产品目录页面:749 (CN2011-ZH PDF) 配用:R0K330879S001BE-ND - KIT DEV RSK M32C/87 |
| R5F363AKNFB | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:RENESAS MCU |
发布紧急采购，3分钟左右您将得到回复。