参数资料
型号: R758-10
厂商: Hamamatsu Photonics
英文描述: PHOTOMULTlPLlER TUBES
中文描述: PHOTOMULTlPLlER管
文件页数: 1/2页
文件大小: 22K
代理商: R758-10
PHOTOMULTlPLlER TUBES
R636–10, R758–10
UV to Near IR (R636–10:185 to 930 nm, R758–10:160 to 930nm) Spectral Response
28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type
GENERAL
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
Parameter
Value
1500
250
R636–10
185 to 930
R758–10
160 to 930
Unit
nm
nm
Spectral Response
Wavelength of Maximum Response
300 to 800
GaAs (Cs)
3
Photocathode
MateriaI
Minimum Effective Area
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
12
mm
pF
pF
Window Material
UV glass
Fused silica glass
Dynode
Direct Interelectrode
Capacitances
Base
SuitabIe Socket
Supply Voltage
0.001
Unit
Vdc
Vdc
mA
Circular–cage
9
4
6
JEDEC No.B11–88
E678–11A(option)
CHARACTERISTlCS (at 25 )
Parameter
Luminous(2856K)
Max.
Typ.
550
62
Min.
400
Cathode Sensitivity
Anode Dark Current at 10A/lm
0.1
2
20
nA
ns
ns
at 350nm
at 632.8nm
at 852.1nm
Radiant
Red/White Ratio (with R–68 filter)
100
63
48
0.53
4.5
250
A/lm
Luminous(2856K)
Radiant
10
5
A/W
2.8
2.8
2.2
10
4
10
4
10
4
Anode Pulse Rise Time
Electron Transit Time
2
Time Response
Electrodes
Ratio
SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
P
1
1
1
1
1
1
1
1
1
1
Anode characteristics are measured with the voItage distribution ratio shown below.
After 30min. storage in darkness
NOTE:
Anode Sensitivity
Unit
A/lm
mA/W
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
Gain
at 350nm
at 632.8nm
at 852.1nm
lnformation furnished by HAMAMATSU is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are
subject to change without notice. No patent right are granted to any of the circuits described herein.
1994 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
相关PDF资料
PDF描述
R759 PHOTOMULTIPLIER TUBE
R8486 PHOTOMULTIPLIER TUBE
R8487 PHOTOMULTIPLIER TUBE
R943-02 PHOTOMULTIPLIER TUBE
R972 PHOTOMULTIPLIER TUBE
相关代理商/技术参数
参数描述
R759 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:PHOTOMULTIPLIER TUBE
R75GF2680AA00J 制造商:KEMET Corporation 功能描述:
R75GF31004030J 功能描述:0.1μF Film Capacitor 90V 160V Polypropylene (PP), Metallized Radial 0.512" L x 0.157" W (13.00mm x 4.00mm) 制造商:kemet 系列:R75 包装:散装 零件状态:有效 电容:0.1μF 容差:±5% 额定电压 - AC:90V 额定电压 - DC:160V 介电材料:聚丙烯(PP),金属化 ESR(等效串联电阻):- 工作温度:-55°C ~ 105°C 安装类型:通孔 封装/外壳:径向 大小/尺寸:0.512" 长 x 0.157" 宽(13.00mm x 4.00mm) 高度 - 安装(最大值):0.358"(9.10mm) 端接:PC 引脚 引线间距:0.394"(10.00mm) 应用:高频,开关;高脉冲,DV/DT;功率因数校正 (PFC) 特性:- 标准包装:1,800
R75GF3100AA00K 制造商:Arcotronics America 功能描述:Cap Film 0.1uF 160V PP 10% Radial 10mm 105°C Bulk
R75GF3100AA30J 功能描述:薄膜电容器 160volts 0.10uF 5% RoHS:否 制造商:Cornell Dubilier 产品类型: 电介质:Polyester 电容:0.047 uF 容差:10 % 电压额定值:100 V 系列:225P 工作温度范围:- 55 C to + 85 C 端接类型:Radial 引线间隔:9.5 mm