参数资料
型号: RB521CS-30T2R
厂商: Rohm Semiconductor
文件页数: 2/4页
文件大小: 167K
描述: DIODE SCHOTTKY SS 30V 100MA 2VMN
产品培训模块: Diodes Overview
产品目录绘图: VMN2 Package
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 100mA
电压 - 在 If 时为正向 (Vf)(最大): 350mV @ 10mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 10µA @ 10V
安装类型: 表面贴装
封装/外壳: 2-SMD,扁平引线
供应商设备封装: VMN2
包装: 标准包装
产品目录页面: 1647 (CN2011-ZH PDF)
其它名称: RB521CS-30T2RDKR
RB521CS-30
 
』Electrical characteristic curves
0
0.02
0.04
0.06
0.08
0.1
0102030
0
0.02
0.04
0.06
0.08
0.1
0 0.1 0.2
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
tim
IM=10mA IF=100mA
300us
Mounted on epoxy board
0
5
10
1
10
100
t
Ifsm
0
5
10
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
20
AVE:3.90A
10
11
12
13
14
15
16
17
18
19
20
AVE:17.34pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
0
5
10
15
20
25
30
250
260
270
280
290
300
AVE:270.2mV
1
10
100
0300 5 10 15 20
0.01
0.1
1
10
100
1000
10000
0102
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500 600
FORWARD VOLTAGE : VF(mV)
VF-IF
CHARACTERISTICS
FORWARD CURRENT:I
F
(mA)
REVERSE
CURRENT:I
R
(uA)
REVERSE VOLTAGE : VR(V)
VR-IR
CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF
DISPERSION MAP
FORWARD VOLTAGE:V
F
(mV)
REVERSE
CURRENT:I
R
(uA)
IR
DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM
DISRESION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME1:t(ms)
IFSM-t CHARACTERISTICS
TIME : t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (
°
C/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
f=1MHz
Ta=25°C
IF=10mA
n=30pcs
Ta=25°C
VR=10V
n=30pcs
AVE:2.017uA
Ta=-25°C
Ta=125°C
Ta=25°C
Ta=75°C
Ta=?25°C
Ta=125°C
Ta=75°C
Ta=25°C
8.3ms
Ifsm
1cyc
DC
D=1/2
Sin(θ=180)
Sin(θ=180)
DC
D=1/2
2/3
2009.12 - Rev.B
Data Sheet
www.rohm.com
?2009 ROHM Co., Ltd. All rights reserved.
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