参数资料
型号: RB751V40T1G
厂商: ON Semiconductor
文件页数: 1/4页
文件大小: 117K
描述: DIODE SCHOTTKY 40V 1MA SOD323
产品变化通告: Wire Change 08/Jun/2009
产品目录绘图: Rectifer SOD-323
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 30mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 370mV @ 1mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 500nA @ 30V
电容@ Vr, F: 2.5pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: SC-76,SOD-323
供应商设备封装: SOD-323
包装: 标准包装
产品目录页面: 1568 (CN2011-ZH PDF)
其它名称: RB751V40T1GOSDKR
?
Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 4
1
Publication Order Number:
RB751V40T1/D
RB751V40T1G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
?
Extremely Fast Switching Speed
?
Extremely Low Forward Voltage -- 0.28 Volts (Typ) @ IF
=1mAdc
?
Low Reverse Current
?
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Reverse Voltage
VRM
40
V
Reverse Voltage
VR
30
Vdc
Forward Continuous Current (DC)
IF
30
mA
Peak Forward Surge Current
IFSM
500
mA
Electrostatic Discharge
ESD
HBM Class: 1C
MM Class: A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR--5 Board,
(Note 1) TA
=25?C
Derate above 25?C
PD
200
1.57
mW
mW/?C
Thermal Resistance
Junction--to--Ambient
RθJA
635
?C/W
Junction and Storage
Temperature Range
TJ,Tstg
-- 5 5 t o
+150
?C
Stresses exceeding Maximum Ratings
may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--5 Minimum Pad
40 V SCHOTTKY
BARRIER DIODE
Device Package Shipping?
ORDERING INFORMATION
SOD--323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
5E = Specific Device Code
M = Date Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
5E MG
G
RB751V40T1G SOD--323
(Pb--Free)
3000/Tape & Reel
http://onsemi.com
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
2
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相关代理商/技术参数
参数描述
RB751V40T1G 制造商:ON Semiconductor 功能描述:Small Signal Diode
RB751V-40TE17 制造商:ROHM Semiconductor 功能描述:
RB751V-40TE-17 功能描述:肖特基二极管与整流器 SCHOTTKY 40V 30MA RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
RB751V-40-TP 功能描述:肖特基二极管与整流器 40V 200 mA RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
RB751V-40WS 功能描述:肖特基二极管与整流器 Schottky ,03Amp 40V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel