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| 型号： | RBV602D |
| 厂商： | Electronics Industry Public Company Limited |
| 英文描述： | SILICON BRIDGE RECTIFIERS |
| 中文描述： | 硅桥式整流器 |
| 文件页数： | 1/2页 |
| 文件大小： | 42K |
| 代理商： | RBV602D |
RBV600D - RBV610D SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
DC
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RBV
600D
50
RBV
601D
100
RBV
602D
200
RBV
604D
400
RBV
606D
600
RBV
608D
800
RBV
610D
1000
UNIT
Maximum Recurrent Peak Reverse Voltage
V
RRM
Volts
Maximum RMS Voltage
V
RMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
V
DC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Current Tc = 55
°
C
Peak Forward Surge Current Single half sine wave
I
F(AV)
6.0
Amps.
Superimposed on rated load (JEDEC Method)
I
FSM
300
Amps.
Current Squared Time at t < 8.3 ms.
I
2
t
V
F
127
A
2
S
Volts
Maximum Forward Voltage per Diode at I
F
= 6.0 Amps.
1.0
Maximum DC Reverse Current Ta = 25
°
C
at Rated DC Blocking Voltage Ta = 100
°
C
Typical Thermal Resistance (Note 1)
I
R
10
μ
A
μ
A
°
C/W
°
C
°
C
I
R(H)
200
R
θ
JC
T
J
2.2
Operating Junction Temperature Range
- 40 to + 150
Storage Temperature Range
T
STG
- 40 to + 150
Notes :
1. Thermal Resistance from junction to case with units mounted on a 2.6"x1.4"x0.06" THK (6.5cm.x3.5cm.x0.15cm.) Al. Plate. Heatsink.
UPDATE : AUGUST 3, 1998
RATING
RBV25
Dimensions in millimeters
C3
4.9 ± 0.2
3.9 ± 0.2
~
3.2 ± 0.1
~
1
1
2
0.7 ± 0.1
1.0 ± 0.1
2.0 ± 0.2
30 ± 0.3
7.5
±0.2
10
±0.2
+
7.5
±0.2
1
相关PDF资料 |
PDF描述 |
|---|---|
| RBV604D | SILICON BRIDGE RECTIFIERS |
| RBV606D | SILICON BRIDGE RECTIFIERS |
| RBV608D | SILICON BRIDGE RECTIFIERS |
| RBV610D | SILICON BRIDGE RECTIFIERS |
| RBV600 | SILICON BRIDGE RECTIFIERS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RBV602G | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:6.0A BRIDGE RECTIFIERS |
| RBV-602L | 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Ultra-Fast-Recovery Rectifier Diode |
| RBV602S | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:Molding Single-Phase Bridge Rectifier |
| RBV603S | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:Molding Single-Phase Bridge Rectifier |
| RBV604 | 制造商:Panasonic Industrial Company 功能描述:DIODE |
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