参数资料
型号: RD4.7ESAB
元件分类: 齐纳二极管
英文描述: 4.69 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
封装: DO-34, 2 PIN
文件页数: 1/8页
文件大小: 81K
代理商: RD4.7ESAB
400 mW DHD ZENER DIODE
(DO-34)
DESCRIPTION
NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34
Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode)
construction having allowable power dissipation of 400 mW.
FEATURES
DO-34 Glass sealed package
This diode can be inserted into a PC board with a shorter pitch (5 mm)
Planar process
DHD (Double Heatsink Diode) construction
VZ Applied E24 standard
ORDERING INFORMATION
RD2.0ES to RD39ES with suffix "AB1", "AB2", or "AB3" should be applied
for orders for suffix "AB".
APPLICATIONS
Circuits for Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc.
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Forward Current
IF
150 mA
Power Dissipation
P
400 mW
to see Fig. 6
Surge Reverse Power
PRSM
100 W (t = 10
s)
to see Fig. 10
Junction Temperature
Tj
175
°C
Storage Temperature
Tstg
–65 to +175
°C
ZENER DIODES
RD2.0ES to RD39ES
Document No. D13935EJ6V0DS00 (6th edition)
(Previous No. DC-2140)
Date Published March 1999 N CP(K)
Printed in Japan
1984
DATA SHEET
0.4
Cathode
indication
2.0 MAX.
25
MIN.
25
MIN.
2.4
MAX.
DO-34 (JEDEC)
Marking color: Black
PACKAGE DIMENSIONS
(in millimeters)
φ
5 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
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