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参数资料
| 型号： | REF10 |
| 厂商： | Texas Instruments, Inc. |
| 英文描述： | Precision Voltage Reference(精密电压基准) |
| 中文描述： | 精密电压基准（精密电压基准） |
| 文件页数： | 5/7页 |
| 文件大小： | 130K |
| 代理商： | REF10 |
REF10
5
THEORY OF OPERATION
The following discussion refers to the diagram on the first
page.
In operation, approximately 6.3V is applied to the
noninverting input of op amp A
1
by zener diode D
. This
voltage is amplified by A
to produce the 10.00V output.
The gain is determined by R
1
and R
2
: G = (R
1
+ R
2
)/R
1
. R
1
and R
are actively laser-trimmed to produce an exact
10.00V output. The zener operating current is derived from
the regulated output voltage through R
. This feedback
arrangement provides closely regulated zener current. R
3
is
actively laser-trimmed to set the zener current to a level
which results in low drift at the output of A
1
. R
4
allows user-
trimming of the output voltage by providing for a small
external adjustment of amplifier gain. Since the TCR of R
4
closely matches the TCR of the gain setting resistors, the
voltage trim has minimal effect on the drift of the reference.
DISCUSSION OF
PERFORMANCE
The REF10 is designed for applications requiring a precision
voltage reference where both the initial value at room
temperature and the drift over temperature are of importance
to the user. Two basic methods of specifying voltage refer-
ence drift versus temperature are in common usage in the
industry—the “butterfly method” and the “box method.”
The REF10 is specified with the more commonly used box
method. The “box” is formed by the high and low specifica-
tion temperatures and a diagonal, the slope of which is equal
to the maximum specified drift.
For the REF10, each J and K unit is tested at temperatures
of 0
°
C, +25
°
C, +50
°
C, and +70
°
C. Each R and S unit is
tested at –55
°
C, –25
°
C, 0
°
C, +25
°
C, +50
°
C, +75
°
C, +100
°
C
and +125
°
C. The minimum and maximum test voltages
must meet this condition:
(
T
HIGH
– T
LOW
This assures the user that the variations of output voltage
that occur as the temperature changes within the specifica-
tion range, T
LOW
to T
HIGH
, will be contained within a box
whose diagonal has a slope equal to the maximum specified
drift. Since the shape of the actual drift curve is not known,
the vertical position of the box is not exactly known either.
It is, however, bounded by V
UPPER BOUND
and V
LOWER BOUND
(see
Figure 1).
Figure 1 uses the REF10KM as an example. It has a drift
specification of 1ppm/
°
C maximum and a specification
temperature range of 0
°
C to +70
°
C. The “box” height (V
1
to
V
) is 700
μ
V, and upper bound and lower bound voltages
are a maximum of 700
μ
V away from the voltage at +25
°
C.
FIGURE 1. REF10KM Output Voltage Drift.
INSTALLATION AND
OPERATING INSTRUCTIONS
BASIC CIRCUIT CONNECTION
Figure 2 shows the proper connection of the REF10. To
achieve the specified performance, pay careful attention to
layout. A low resistance star configuration will reduce volt-
age errors, noise pickup, and noise coupled from the power
supply. Commons should be connected as indicated being
sure to minimize interconnection resistances.
REF10
2
6
4
1μF
Tantalum
+
R
L1
R
L2
R
L3
(2)
(2)
(1)
(1)
V
CC
FIGURE 2. REF10 Installation.
NOTES: (1) Lead resistances here of up to a few
have negligible effect on
performance. (2) A resistance of 0.1
in series with these leads will cause
a 1mV error when the load current is at its maximum of 10mA. This results
in a 0.01% error of 10V.
OPTIONAL OUTPUT VOLTAGE ADJUSTMENT
Optional output voltage adjustment circuits are shown in
Figures 3 and 4. Trimming the output voltage will change
the voltage drift by approximately 0.01ppm/
°
C per mV of
trimmed voltage. In the circuit in Figure 3, any mismatch in
TCR between the two sections of the potentiometer will also
V
UPPER BOUND
+10.0007
V
1
V
NOMINAL
+10.0000
V
2
+9.9993
0
25
70
O
Temperature (°C)
700μV
Worst-case
V
for REF10KM
V
UPPER BOUND
(T
HIGH
)
Typical Drift
Diagonal
1ppm/°C for REF10KM
(T
LOW
)
V
OUT MAX
– V
OUT MIN
)
/ 10V
X
10
6
≤
Drift
Specification
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