参数资料
型号: RF1005TF6S
厂商: Rohm Semiconductor
文件页数: 1/4页
文件大小: 317K
描述: DIODE FAST REC 600V 10.0A TO-220
产品目录绘图: TO-220NFM
特色产品: Fast Recovery Diodes
标准包装: 500
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 10A
电压 - 在 If 时为正向 (Vf)(最大): 1.7V @ 10A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 40ns
电流 - 在 Vr 时反向漏电: 10µA @ 600V
安装类型: 通孔
封装/外壳: TO-220-2 整包
供应商设备封装: TO-220NFM
包装: 管件
产品目录页面: 1648 (CN2011-ZH PDF)
Data Sheet
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
Super Fast Recovery Diode
RF1005TF6S
?Series
?Dimensions (Unit : mm)
?Structure
Standard Fast Recovery
?Applications
General rectification
?Features
1)Single type.(TO-220)
2)High switching speed
?Construction
Silicon epitaxial planer
?Absolute maximum ratings
(Tc=25
?C)
Symbol
VRM
VR
Average rectified forward current
Io
Tj
Tstg
?Electrical characteristics
(Tj=25
?C)
Symbol
Forward voltage
VF
Reverse current
IR
Reverse recovery time(*) trr
Thermal resistance(*) Rth(j-c)
(*) : Design assurance without measurement.
150
?55 to ?150
Junction temperature
Storage temperature
VR=600V
- 1.4
Parameter
Min. Typ.
Conditions
IF=10A
1.7
- 0.05 10
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
-3040ns
-
- 3.5
Unit
one cycle peak value, Tj=25?C
Forward current surge peak
IFSM
100
A
60Hz half sin wave, Non-repetitive
Max.
?C
?C
Parameter
Conditions
Limits Unit
Repetitive peak reverse voltage
Duty ?
0.5
600
V
Reverse voltage
Direct voltage
600
V
60Hz half sin wave, Resistance load,
Tc=78?C
10 A
V
μA
?C/ W
(1)
(3)
Manufacture Year
Manufacture Week
ROHM : TO220NFM
(1) (3)
10
+0.3 ?0.1
+0.4
?
0.2
0.62
+0.1?0.05
2.6
±0.5
2.8+0.2?0.1
4.5+0.3 ?0.1
2.54
±0.5
3.2
±0.2
2.54
±0.5
0.76
1.12
1.02
14
15
±
0.5
12
±
0.2
8
1.6MAX
±
0.2
2.3
±
0.3
1/3
2011.05 - Rev.A
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