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参数资料
| 型号： | RFD3055LESM9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 11A TO-252AA |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 107 毫欧 @ 8A，5V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 25V |
| 功率 - 最大： | 38W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | RFD3055LESM9ADKR |
RFD3055LE, RFD3055LESM
Data Sheet
N-Channel Logic Level Power MOSFET
60V, 11A, 107 m?
These N-Channel enhancement-mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49158.
Ordering Information
September 20 13
Features
? 11A, 60V
? r DS(ON) = 0.107 ?
? Temperature Compensating PSPICE ? Model
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
PART NUMBER
RFD3055LE
PACKAGE
TO-251AA
BRAND
F3055L
RFD3055LESM 9A
TO-252AA
F3055L
G
S
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
?2002 Fairchild Semiconductor Corporation
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-252AA
DRAIN (FLANGE)
RFD3055LE, RFD3055LESM Rev. C0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RFD3055LESM9A_R4383 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD3055LESM9A_SB82064 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD3055LESM9AS2478 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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