参数资料
型号: RFD3055LESM
厂商: Fairchild Semiconductor
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CH 60V 11A TO-252AA
标准包装: 75
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 11A
开态Rds(最大)@ Id, Vgs @ 25° C: 107 毫欧 @ 8A,5V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 11.3nC @ 10V
输入电容 (Ciss) @ Vds: 350pF @ 25V
功率 - 最大: 38W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252AA
包装: 管件
RFD3055LE, RFD3055LESM
Data Sheet
N-Channel Logic Level Power MOSFET
60V, 11A, 107 m?
These N-Channel enhancement-mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49158.
Ordering Information
September 20 13
Features
? 11A, 60V
? r DS(ON) = 0.107 ?
? Temperature Compensating PSPICE ? Model
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
PART NUMBER
RFD3055LE
PACKAGE
TO-251AA
BRAND
F3055L
RFD3055LESM 9A
TO-252AA
F3055L
G
S
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
?2002 Fairchild Semiconductor Corporation
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-252AA
DRAIN (FLANGE)
RFD3055LE, RFD3055LESM Rev. C0
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