参数资料
型号: RFDA2025TR13
厂商: RF MICRO DEVICES INC
元件分类: 模拟信号调理
英文描述: SPECIALTY ANALOG CIRCUIT, QCC32
封装: 5.20 X 5.20 MM, GREEN, MCM-32
文件页数: 4/11页
文件大小: 1187K
代理商: RFDA2025TR13
2 of 11
7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (VCC, VDD)
5.5
V
Collector Current (IC)200
mA
Power Dissipation1 (PDISS)
750
mW
RF Input Power
20
dBm
Operating Temperature (TCASE)
-40 to +85
°C
Junction Temperature (TJ)
150
°C
Storage Temperature
-40 to +150
°C
ESD Rating (HBM)
Class 1C
Moisture Sensitivity Level
MSL 3
Notes:
1. PDISS=VCC*IC-RF Output Power+RF Input Power
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Frequency Range
500
2500
MHz
Gain (Max Gain State)
10.0
11.5
13.0
dB
Attenuation=0dB, 2017MHz
Gain Control Range
31.5
dB
0.5dB LSB, 6 bits
Step Accuracy
±(0.1 +5% attenuation setting)
dB
Major state max error
Output IP3
40
43
dBm
2017MHz, POUT=5dBm/tone, 1MHz spacing
Output P1dB
23
25
dBm
Attenuation=0dB, 2017MHz
Input Return Loss
17
dB
2017MHz
Output Return Loss
11
dB
2017MHz
Noise Figure
7
dB
2017MHz, Attenuation=0dB
tRISE, tFALL
250
ns
10/90% RF
Amplifier Supply Voltage (VCC)
4.75
5.00
5.25
V
Attenuator Supply Voltage (VDD)
3.30
5.00
5.25
V
Total Supply Current
90
115
135
mA
Sum of currents from VDD and VCC
Thermal Resistance
87
°C/W
Control Interface
6 Bit, Serial
Control Voltages
Low, VCTL=0 to 0.8 VDC
High, VCTL=2.0 to VDD VDC
V
Notes:
1. All measurements based on the 1800MHz to 2200MHz Application Circuit, T=25°C
2. VCC=VDD=+5V, VCTL=0/5V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
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