参数资料
型号: RGP02-12EHE3/73
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 67K
描述: DIODE GPP 0.5A 1200V 300NS DO-41
标准包装: 3,000
二极管类型: 标准
电压 - (Vr)(最大): 1200V(1.2kV)
电流 - 平均整流 (Io): 500mA
电压 - 在 If 时为正向 (Vf)(最大): 1.8V @ 100mA
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 300ns
电流 - 在 Vr 时反向漏电: 5µA @ 1200V
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-204AL(DO-41)
包装: 带盒(TB)
‘lllvVISHM ____________________________________fE¥TgEZ§E7 www'ViShay'C°m Vishay General Semiconductor
ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 0C unless otherwise noted)
PARAMETER TESTCONDITIONS
Maximuminstantaneousforward voltage
Maximum DC
reverse Current at
rated DC blocking
voltage
Maximum reverse
recovew time
PARAMETER
Typical thermal resistance
Note(i) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted
PREFERRED P/N DELIVERY MODE
RGP02-12E-E3/54 13“ diameter paper tape and reel
RGPO2-12E-E3/73 Ammo pack packaging
RGPO2-12EHE3/54 (1) 13“ diameter paper tape and reel
RGP02-12EHE3/73 (1) Ammo pack packaging
N oteii) AEC-Q1o1 qumnied
RATINGS AND cHARAcTERIsTIcs cuRvEs (TA = 25 cc unless otherwise noted)
0.5 25§ T J : TJ MaxE 2 5.3 ms Single Hairsmewaveg’ 0.4 E 203o 22
B 0: 0.3 :1) 15
g 9 |cc (3‘g p
1“ 0.2 ta 10E Eo o|L u.
§ 0 1 § 5E Rests e or inductive Load D.g u 375 (9 mm) Lead Lengtn0 025 50 75 100 125 150 175 1 in ion
Ambient Temperature (Dc) Number or Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 11-Dec-13 2 Document Number: 88699
For technical questions within your region: DiodesAmericas@vishay.Corn, DiodesAsia@vishay.com, DiodesEurope@Vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.comzdoc?9100o
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